Semiconductor device and a method for manufacturing a semiconductor device

ABSTRACT

The performances of semiconductor elements disposed in a multilayer wiring layer are improved. A semiconductor device includes: a first wire disposed in a first wiring layer; a second wire disposed in a second wiring layer stacked over the first wiring layer; a gate electrode arranged between the first wire and the second wire in the direction of stacking of the first wiring layer and the second wiring layer, and not coupled with the first wire and the second wire; a gate insulation film disposed over the side surface of the gate electrode; and a semiconductor layer disposed over the side surface of the gate electrode via the gate insulation film, and coupled with the first wire and the second wire.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2012-021069 filed onFeb. 2, 2012 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention relates to a semiconductor device, and a methodfor manufacturing a semiconductor device.

Patent Document 1 describes the following: in wiring layers, asemiconductor film is formed; using the semiconductor film and wires ofthe wiring layers, a transistor is formed. In the transistor, the wirearranged under the semiconductor film is used as a gate electrode, and adiffusion preventive film between the wiring layers is used as a gateinsulation film.

[Patent Document 1]

-   Japanese Unexamined Patent Publication No. 2010-141230

SUMMARY

In the semiconductor element described in Patent Document 1, the twowires disposed in the same wiring layer serve as source/drainelectrodes. Further, the gate electrode is formed of the wire disposedunder the source/drain electrodes, and arranged between the source/drainelectrodes in plan view. Accordingly, the channel length of thesemiconductor element is defined by the space between the two wiresforming the source/drain electrodes. In this case, the miniaturizationlimit of the channel length is restricted by the resolution limit of thelithography for use in wire formation. Therefore, the channel length ofa semiconductor element disposed in the multilayer wiring layer isrequired to be shortened for improving the performances of thesemiconductor element.

In accordance with the present invention, there is provided asemiconductor device which includes: a first wire disposed in a firstwiring layer; a second wire disposed in a second wiring layer stackedover the first wiring layer; a gate electrode arranged between the firstwire and the second wire in the direction of stacking of the firstwiring layer and the second wiring layer, and not coupled with the firstwire and the second wire; a gate insulation film disposed over the sidesurface of the gate electrode; and a semiconductor layer disposed overthe side surface of the gate electrode via the gate insulation film, andcoupled with the first wire and the second wire.

In accordance with the present invention, the first wire disposed in thefirst wiring layer, and the second wire disposed in the second wiringlayer stacked over the first wiring layer form the source/drainelectrodes. Whereas, the gate electrode is arranged between the firstwire and the second wire in the direction of stacking of the firstwiring layer and the second wiring layer. Accordingly, the channellength of the semiconductor element is determined by the film thicknessof the gate electrode. In this case, the channel length of thesemiconductor element is not restricted by the lithography resolutionlimit of the wire. Therefore, the channel length of the semiconductorelement disposed in the multilayer wiring layer can be shortened,thereby to improve the performances of the semiconductor element.

In accordance with the present invention, there is provided a method formanufacturing a semiconductor device. The method includes the steps of:forming a first wiring layer having a first wire over a semiconductorsubstrate; forming a gate electrode not coupled with the first wire overthe first wiring layer; forming a gate insulation film over the sidesurface of the gate electrode; forming a semiconductor layer coupledwith the first wire via the gate insulation film, over the side surfaceof the gate electrode; and forming a second wiring layer having a secondwire not coupled with the gate electrode, and coupled with thesemiconductor layer, over the first wiring layer.

In accordance with the present invention, it is possible to improve theperformances of a semiconductor element disposed in a multilayer wiringlayer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a semiconductor device inaccordance with a first embodiment;

FIG. 2 is a plan view showing the semiconductor device shown in FIG. 1;

FIG. 3 is a cross-sectional view showing a multilayer wiring structureof the semiconductor device in accordance with the first embodiment;

FIG. 4 is a cross-sectional view showing the multilayer wiring structureof the semiconductor device in accordance with the first embodiment;

FIGS. 5A and 5B are each a cross-sectional view showing a manufacturingmethod of the semiconductor device shown in FIG. 1;

FIGS. 6A and 6B are each a cross-sectional view showing a manufacturingmethod of the semiconductor device shown in FIG. 1;

FIGS. 7A and 7B are each a cross-sectional view showing a manufacturingmethod of the semiconductor device shown in FIG. 1;

FIGS. 8A and 8B are each a cross-sectional view showing a manufacturingmethod of the semiconductor device shown in FIG. 1;

FIGS. 9A and 9B are each a cross-sectional view showing a manufacturingmethod of the semiconductor device shown in FIG. 1;

FIGS. 10A and 10B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 1;

FIGS. 11A and 11B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 1;

FIGS. 12A and 12B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 1;

FIG. 13 is a cross-sectional view showing a semiconductor device inaccordance with a second embodiment;

FIG. 14 is a cross-sectional view showing a semiconductor device inaccordance with a third embodiment;

FIG. 15 is a cross-sectional view showing a semiconductor device inaccordance with a fourth embodiment;

FIGS. 16A and 16B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 15;

FIGS. 17A and 17B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 15;

FIGS. 18A and 18B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 15;

FIGS. 19A and 19B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 15;

FIGS. 20A and 20B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 15;

FIGS. 21A and 21B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 15;

FIG. 22 is a cross-sectional view showing a semiconductor device inaccordance with a fifth embodiment;

FIGS. 23A and 23B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 22;

FIGS. 24A and 24B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 22;

FIGS. 25A and 25B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 22;

FIG. 26 is a cross-sectional view showing a manufacturing method of asemiconductor device in accordance with a sixth embodiment;

FIGS. 27A and 27B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 28A and 28B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 29A and 29B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 30A and 30B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 31A and 31B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 32A and 32B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 33A and 33B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 34A and 34B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIGS. 35A and 35B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 26;

FIG. 36 is a cross-sectional view showing a manufacturing method of thesemiconductor device shown in FIG. 26;

FIG. 37 is a cross-sectional view showing a semiconductor device inaccordance with a seventh embodiment;

FIGS. 38A and 38B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 37;

FIGS. 39A and 39B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 37;

FIGS. 40A and 40B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 37;

FIGS. 41A and 41B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 37;

FIGS. 42A and 42B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 37;

FIGS. 43A and 43B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 37;

FIG. 44 is a cross-sectional view showing a semiconductor device inaccordance with an eighth embodiment;

FIG. 45 is a plan view showing the semiconductor device shown in FIG.44;

FIG. 46 is a cross-sectional view showing a semiconductor device inaccordance with a ninth embodiment;

FIG. 47 is a plan view showing the semiconductor device shown in FIG.46;

FIG. 48 is a plan view showing a semiconductor device in accordance witha tenth embodiment;

FIG. 49 is a cross-sectional view showing a semiconductor device inaccordance with an eleventh embodiment;

FIG. 50 is a plan view showing the semiconductor device shown in FIG.49;

FIG. 51 is a cross-sectional view showing a semiconductor device inaccordance with a twelfth embodiment;

FIG. 52 is a circuit diagram showing a CMOS inverter circuit included inthe semiconductor device shown in FIG. 51;

FIG. 53 is a cross-sectional view showing a first modified example ofthe semiconductor device shown in FIG. 51;

FIG. 54 is a cross-sectional view showing a second modified example ofthe semiconductor device shown in FIG. 51;

FIG. 55 is a circuit diagram showing a semiconductor device inaccordance with a thirteenth embodiment;

FIG. 56 is a circuit diagram showing a semiconductor device inaccordance with a fourteenth embodiment;

FIG. 57 is a circuit diagram showing a semiconductor device inaccordance with a fifteenth embodiment;

FIG. 58 is a cross-sectional view showing a semiconductor device inaccordance with a sixteenth embodiment;

FIG. 59 is a plan view showing the semiconductor device shown in FIG.58;

FIG. 60 is a cross-sectional view showing a semiconductor device inaccordance with a seventeenth embodiment;

FIG. 61 is a circuit diagram showing the semiconductor device shown inFIG. 60;

FIG. 62 is a cross-sectional schematic view showing a semiconductordevice in accordance with an eighteenth embodiment; and

FIGS. 63A and 63B are each a cross-sectional view showing amanufacturing method of the semiconductor device shown in FIG. 22.

DETAILED DESCRIPTION

Below, embodiments of the present invention will be described byreference to the accompanying drawings. Incidentally, throughout thedrawings, the same constitutional elements are given the same referencenumerals and signs, and a description thereon will be appropriatelyomitted.

FIG. 1 is a cross-sectional view showing a semiconductor device 300 inaccordance with a first embodiment. Whereas, FIG. 2 is a plan viewshowing the semiconductor device 300 shown in FIG. 1, and corresponds tothe A-A′ plane of FIG. 1. Incidentally, FIG. 1 corresponds to the B-B′cross section of FIG. 2. The semiconductor device 300 in accordance withthe present embodiment includes a wire 102, a wire 202, a gate electrode20, a gate insulation film 22, and a semiconductor layer 24.

The wire 102 is disposed in a wiring layer 100. The wire 202 is disposedin a wiring layer 200 stacked over the wiring layer 100. The gateelectrode 20 is arranged between the wire 102 and the wire 202 in thedirection of stacking of the wiring layer 100 and the wiring layer 200.Further, the gate electrode 20 is not coupled with the wire 102 and thewire 202. The gate insulation film 22 is disposed over the side surfaceof the gate electrode 20. The semiconductor layer 24 is disposed overthe side surface of the gate electrode 20 via the gate insulation film22. Whereas, the semiconductor layer 24 couples the wire 102 and thewire 202. Below, the configuration of the semiconductor device 300 willbe described in details.

As shown in FIG. 1, the wiring layer 100 includes a diffusion preventivefilm 122 disposed between the wiring layers, and an interlayerinsulation film 120 disposed over the diffusion preventive film 122. Theinterlayer insulation film 120 is formed of, for example, a siliconoxide film or a low dielectric constant insulation layer with a lowerdielectric constant than that of the silicon oxide film (e.g., arelative dielectric constant of 2.7 or less), or a combination thereof.The low dielectric constant layer is a carbon-containing film such asSiOC, SiOCH, or SiLK (registered trade name), a HSQ (hydrogensilsesquioxane) film, a MHSQ (methylated hydrogen silsesquioxane) film,a MSQ (methyl silsesquioxane) film, or a porous film thereof. Thediffusion preventive film 122 is comprised of, for example, SiN or SiCN.The film thickness of the diffusion preventive film 122 is, for example,10 to 50 nm.

As shown in FIG. 1, in the wiring layer 100, there are disposed the wire102, a wire 104, a wire 106, a via 112, a via 114, and a via 116. Thevia 112 is disposed under the wire 102, and is coupled with the wire102. The via 114 is disposed under the wire 104, and is coupled with thewire 104. The via 116 is disposed under the wire 106, and is coupledwith the wire 106.

The wire 102, the wire 104, and the wire 106 are embedded in theinterlayer insulation film 120. Further, the wire 102, the wire 104, andthe wire 106 are formed in the same step. For this reason, the wire 102,the wire 104, and the wire 106 are formed of, for example, the samematerial. The wire 102, the wire 104, and the wire 106 are formed of ametal material including, for example, copper as a main component (95%or more). Incidentally, the wire 102 and the via 112, the wire 104 andthe via 114, and the wire 106 and the via 116 may be respectively formedby a single damascene method, or may be formed by a dual damascenemethod. Further, the wire 102, the wire 104, and the wire 106 may be,for example, Al wires. In this case, the wire 102, the wire 104, and thewire 106 each have, for example, a structure obtained by selectivelyremoving a metal film by dry etching.

As shown in FIG. 1, the wiring layer 200 includes the gate electrode 20,the gate insulation film 22, the semiconductor layer 24, an insulationfilm 30, and an insulation film 40. The insulation film 30 is disposedover the interlayer insulation film 120. Further, the insulation film 30is disposed in such a manner as to cover a part of the wire 102, and apart of the wire 104. The insulation film 30 has an opening 32 over thewire 104. Accordingly, the wire 104 is exposed above the insulation film30. The insulation film 30 can be formed of the same material as thatfor a diffusion preventive film 222 described later, and can be formedof, for example, SiN or SiCN. The film thickness of the insulation film30 is, for example, 10 to 50 nm.

The gate electrode 20 is disposed over the insulation film 30. Namely,the insulation film 30 is arranged between the wire 102 and the gateelectrode 20. Accordingly, the gate electrode 20 is not coupled with thewire 102. Further, the gate electrode 20 is coupled with the wire 104via the opening 32 disposed in the insulation film 30. As a result, agate voltage is applied to the gate electrode 20 via the wire 104. Thegate electrode 20 is comprised of, for example, Ti, Ta, W, Al, TiN, TaN,or WN, a compound including Co or W, or a material obtained byintroducing at least one of C and O to any of them. The gate electrode20 may be a single layer comprised of any of the materials, or may be alamination of two or more layers. The film thickness of the gateelectrode 20 is, for example, 5 to 200 nm.

The insulation film 40 is disposed over the gate electrode 20. Theinsulation film 40 functions as a hard mask for patterning the gateelectrode 20 by etching. The insulation film 40 is comprised of, forexample, SiN or SiO₂. Further, the film thickness of the insulation film40 is, for example, 10 to 150 nm. By setting the film thickness of theinsulation film 40 at 10 to 150 nm, it is possible to inhibit thefollowing: when an opening for embedding the wire 202 and the via 212therein is formed in the interlayer insulation film 220 (see FIG. 12B),the insulation film 40 is removed, so that the gate electrode 20 isexposed. The film thickness of the insulation film 30 and the filmthickness of the insulation film 40 may be in the relation that eitherone is larger than the other, or may be equal to each other. When thefilm thickness of either one thereof is larger than the other, the wireof the wire 102 and the wire 202 on the side in contact with theinsulation film having a larger film thickness can be allowed to serveas a drain electrode. Incidentally, in the present embodiment, forexample, the film thickness of the insulation film 30 is larger than thefilm thickness of the insulation film 40.

As shown in FIG. 2, the planar shape of the gate electrode 20 is, forexample, a rectangle. Incidentally, the planar shape of the gateelectrode 20 is not limited thereto, and may be a polygon other than arectangle, or the like. The planar shapes of the insulation film 30 andthe insulation film 40 are the same as that of the gate electrode 20(not shown).

As shown in FIG. 1, the gate insulation film 22 is formed over the sidesurfaces of the gate electrode 20, the insulation film 30, and theinsulation film 40. The gate insulation film 22 is in a frame shape inplan view. Further, the gate insulation film 22 is disposed along thefour sides of the gate electrode 20 in a rectangular shape in plan view.The gate insulation film 22 is comprised of, for example, a siliconoxide film or a silicon nitride film, an oxide film of at least one ofHf, Zr, Al, Ti, and Ta, a metal silicate product of any of these, or afilm obtained by adding at least one of nitrogen and carbon to any ofthese. The film thickness of the gate insulation film 22 in the planedirection horizontal to the substrate (see FIG. 3) plane is, forexample, 0.5 to 30 nm.

The semiconductor layer 24 is disposed via the gate insulation film 22over the side surfaces of the gate electrode 20, the insulation film 30,and the insulation film 40. The semiconductor layer 24 is in a frameshape in plan view. Further, the semiconductor layer 24 is disposedalong the four sides of the gate electrode 20 in a rectangular shape inplan view. Furthermore, the semiconductor layer 24 is coupled with thewire 102. The semiconductor layer 24 is formed of, for example, an oxidesemiconductor. As the oxide semiconductors, there can be used, forexample, InGaZnO, InZnO, ZnO, ZnAlO, ZnCuO, NiO, SnO, SnO₂, CuO, Cu₂O,Ta₂O₅, or TiO₂, or those obtained by adding impurities such as nitrogenthereto. The film thickness of the semiconductor layer 24 in the planedirection horizontal to the substrate 60 (see FIG. 3) plane is, forexample, 10 to 100 nm. Whereas, the thickness of the semiconductor layer24 in the direction of stacking of the wiring layer 100 and the wiringlayer 200 is, for example, 30 to 300 nm.

As shown in FIG. 1, the wiring layer 200 includes a diffusion preventivefilm 222 disposed over the wiring layer 100, and an interlayerinsulation film 220 disposed over the diffusion preventive film 222. Thediffusion preventive film 222 is disposed in such a manner as to coverthe gate electrode 20, the gate insulation film 22, the semiconductorlayer 24, the insulation film 30, and the insulation film 40. Theinterlayer insulation film 220 is formed of, for example, the samematerial as that for the interlayer insulation film 120. The diffusionpreventive film 222 is formed of, for example, the same material as thatfor the diffusion preventive film 122, and has the same film thicknessas that of the diffusion preventive film 122.

As shown in FIG. 1, in the wiring layer 200, there are disposed the wire202, the wire 206, the via 212, and a via 216. The via 212 is disposedunder the wire 202, and is coupled with the wire 202. Further, the via212 is coupled with the semiconductor layer 24. Accordingly, thesemiconductor layer 24 is coupled with the wire 202. Whereas, the via216 is disposed under the wire 206, and is coupled with the wire 206.

The part of the via 212 shown in FIG. 2 shows the bottom surface of thevia 212. Whereas, the part of the wire 102 shown in FIG. 2 shows the topsurface of the wire 102. As shown in FIG. 2, the top surface of the wire102 and the bottom surface of the via 212 overlap each other in planview. Whereas, a part of the semiconductor layer 24 is arranged in theregion of overlap between the top surface of the wire 102 and the bottomsurface of the via 212. In the present embodiment, the region of overlapbetween the top surface of the wire 102 and the bottom surface of thevia 212 includes one side of the gate electrode 20, Namely, one side ofthe gate electrode 20 in a rectangular shape in plan view, and a part ofeach of two sides adjacent to the one side are included in the region ofoverlap between the top surface of the wire 102 and the bottom surfaceof the via 212. In this case, one side of the semiconductor layer 24disposed over the side surface of the gate electrode 20, and a part ofeach of two sides adjacent to the one side are also included in theregion of overlap between the top surface of the wire 102 and the bottomsurface of the via 212.

As shown in FIG. 1, the wire 202 and the wire 206 are embedded in, forexample, the interlayer insulation film 220. Further, the wire 202 andthe wire 206 are formed in the same step. For this reason, the wire 202and the wire 206 are formed of, for example, the same material. The wire202 and the wire 206 are formed of, for example, the same material asthat for the wire 102. In the example shown in FIG. 1, the wire 202 andthe via 212, and the wire 206 and the via 216 may be respectively formedby a single damascene method, or may be formed by a dual damascenemethod. Further, the wire 202 and the wire 206 may be, for example, Alwires. In this case, the wire 202 and the wire 206 has, for example, astructure obtained by selectively removing a metal film by dry etching.

As shown in FIG. 1, at the sidewall of a trench or a hole for embeddingthe wire 202 and the via 212 therein, there is formed a barrier metalfilm 232. Whereas, at the sidewall of a trench or a hole for embeddingthe wire 206 and the via 216 therein, there is formed a barrier metalfilm 236. The barrier metal film 232 and the barrier metal film 236 areeach comprised of, for example, Ti, Ta, Ru, or W, or a nitride or anoxide thereof. Incidentally, the barrier metal film 232 and the barriermetal film 236 may be a single layer comprised of any of the materials,or may be a lamination of two or more layers. As an example of thelamination structure, there is, for example, a lamination structure ofTiN (upper layer)/Ti (lower layer) or Ta (upper layer)/TaN (lowerlayer).

Whereas, also in the wiring layer 100, at the sidewall of a trench or ahole for embedding each wire and via therein, there may be formed abarrier metal film. The barrier metal film is equal in material andstructure to, for example, the barrier metal film 232.

In present embodiment, the wire 102, the wire 202, the gate electrode20, the gate insulation film 22, and the semiconductor layer 24 form thetransistor 10. In a portion of the semiconductor layer 24 arranged inthe region of overlap between the bottom surface of the via 212 and thetop surface of the wire 102, there is formed a channel region 50.Whereas, the wire 202 coupled with the semiconductor layer 24 throughthe via 212, and the wire 102 coupled with the semiconductor layer 24function as source/drain electrodes. The insulation film 30 and theinsulation film 40 have a function as a sidewall for defining thedistance between the gate electrode 20 and the source/drain electrode.In the present embodiment, the drain electrode is formed of, forexample, the wire 102. Whereas, the film thickness of the insulationfilm 30 disposed between the wire 102 and the gate electrode 20 can beset larger than the film thickness of the insulation film 40 disposedbetween the via 212 and the gate electrode 20. Thus, in the case wherethe wire 102 is used as the drain electrode, the film thickness of theinsulation film 30 disposed between the gate electrode 20 and the drainelectrode is increased. This enables the improvement of the drainwithstand voltage of the transistor 10. In the present embodiment, thedrain electrode may be formed of the wire 202. Further, the filmthickness of the insulation film 40 disposed between the via 212 and thegate electrode 20 can be set larger than the film thickness of theinsulation film 30 disposed between the wire 102 and the gate electrode20. Thus, in the case where the wire 202 is used as the drain electrode,the film thickness of the insulation film 40 disposed between the gateelectrode 20 and the drain electrode is increased. This enables theimprovement of the drain withstand voltage of the transistor 10.

Incidentally, the channel length of the channel region 50 in the presentembodiment is defined by the thickness of the semiconductor layer 24 inthe direction of stacking of the wiring layer 100 and the wiring layer200. Whereas, the channel width of the channel region 50 is defined bythe length of the semiconductor layer 24 arranged in the region ofoverlap between the top surface of the wire 102 and the bottom surfaceof the via 212 in the plane direction horizontal to the substrate 60(see FIG. 3) plane.

FIG. 3 is a cross-sectional view showing the multilayer wiring structureof the semiconductor device 300 in accordance with the presentembodiment. FIG. 4 shows a cross-sectional view showing a multilayerwiring structure of a semiconductor device 300 in accordance with thepresent embodiment, and shows a different example from FIG. 3. As shownin FIG. 3, the semiconductor device 300 includes a substrate 60, and amultilayer wiring layer disposed over the substrate 60. The wiring layer100 and the wiring layer 200 shown in FIG. 1 form a part of themultilayer wiring layer. The multilayer wiring layer includes a localwiring layer 80 which is a wiring layer for forming a circuit, and aglobal wiring layer 82 disposed over the local wiring layer 80, and forrouting a power source wire and a grounding wire. As shown in FIG. 3,the wiring layer 200 is disposed, for example, at the lowermost layer ofthe global wiring layer 82. Whereas, the wiring layer 100 is disposed,for example, at the uppermost layer of the local wiring layer 80.

As shown in FIG. 3, in the substrate 60, there are disposed an elementisolation film 62, a transistor 70, and a transistor 72. Further, overthe element isolation film 62, there are disposed passive elements 74(e.g., resistance element). The passive elements 74 are formed in thesame step as that for the gate electrodes of the transistor 70 and thetransistor 72.

Over the wiring layer 200, a wire 94 is formed via an interlayerinsulation film 90. The wire 94 is an Al wire, and is coupled with awire (e.g., wire 206) disposed in the wiring layer 200 through the via92. Barrier metal films are formed at the bottom surface and the topsurface of the wire 94. The barrier metal film is a metal film includingTi as a main component, a film of nitride of the metal, or a laminationfilm of the metal film and the nitride film. Incidentally, at the samelayer as the wire 94, there are formed electrode pads (not shown).

Incidentally, each wiring layer forming the local wiring layer 80 isthinner than each wiring layer forming the global wiring layer 82. Then,each wire of the local wiring layer 80 is also thinner than each wire ofthe global wiring layer 82. Further, the global wiring layer 82 islarger in wire width and distance between the wires than the localwiring layer 80.

FIG. 4 is a view showing a modified example of FIG. 3. In this drawing,the wiring layer 100 and the wiring layer 200 are both formed in theglobal wiring layer 82. Then, the wire 202 and the wire 206 are eachformed of an Al wire. A power source pad, a grounding pad, and an I/Opad are formed in the same layer as the wire 202 and the wire 206.

Then, a description will be given to a method for manufacturing thesemiconductor device 300 in accordance with the present embodiment.FIGS. 5A and 5B to 12A and 12B are each a cross-sectional view showing amethod for manufacturing the semiconductor device 300 shown in FIG. 1.First, as shown in FIG. 5A, the wiring layer 100 is formed. The wiringlayer 100 forms a part of the multilayer wiring layer disposed over thesubstrate 60. The wiring layer 100 is formed in the following manner.First, over the wiring layer arranged at a layer underlying the wiringlayer 100, there are stacked the diffusion preventive film 122 and theinterlayer insulation film 120. Then, in the diffusion preventive film122 and the interlayer insulation film 120, there are formed the wire102 and the via 112, the wire 104 and the via 114, and the wire 106 andthe via 116. The wire 102 and the via 112, the wire 104 and the via 114,and the wire 106 and the via 116 are formed using, for example, a dualdamascene method or a single damascene method. Alternatively, the wire102, the wire 104, and the wire 106 may be formed by, for example,patterning the metal film disposed over the interlayer insulation film120 by dry etching or the like. Then, as shown in FIG. 5B, theinsulation film 30 is formed over the wiring layer 100.

Then, as shown in FIG. 6A, over the insulation film 30, there is formeda resist film 250. Then, the resist film 250 is exposed to light, and isdeveloped, so that an opening 252 arranged over the wire 104 in planview is formed in the resist film 250. Incidentally, the opening 252 isdisposed in such a manner as to be arranged inside the wire 104 in planview. Then, as shown in FIG. 6B, by dry etching using the resist film250 as a mask, or the like, a portion of the insulation film 30 arrangedunder the opening 252 is selectively removed. As a result, the opening32 is formed in the insulation film 30. At this step, the wire 104 isexposed above the insulation film 30 via the opening 32.

Then, as shown in FIG. 7A, the resist film 250 is removed. The removalof the resist film 250 is performed by a method such as ashing. Then, asshown in FIG. 7B, the gate electrode 20 is formed over the insulationfilm 30 and in the opening 32. Then, the insulation film 40 is formedover the gate electrode 20.

Then, as shown in FIG. 8A, a resist film 254 is formed. The resist film254 is formed by exposing to light and developing the resist filmdisposed over the insulation film 40. Then, as shown in FIG. 8B, theinsulation film 30, the gate electrode 20, and the insulation film 40are selectively removed by dry etching using the resist film 254 as amask, or the like. The etching is performed so that the insulation film30, the gate electrode 20, and the insulation film 40 cover a part ofthe wire 102 and a part of the wire 104. As a result, the insulationfilm 30, the gate electrode 20, and the insulation film 40 are processedinto a prescribed shape. Incidentally, in the etching treatment step,the insulation film 40 functions as a hard mask.

Then, as shown in FIG. 9A, the resist film 254 is removed. The resistfilm 254 is removed by a method such as ashing. Then, as shown in FIG.9B, the gate insulation film 22 is formed over the wiring layer 100. Atthis step, the gate insulation film 22 is formed in such a manner as tocover the insulation film 30, the gate electrode 20, and the insulationfilm 40.

Then, as shown in FIG. 10A, the entire surface of the gate insulationfilm 22 is etched back. As a result, the gate insulation film 22 can beprocessed into a prescribed shape, namely, a shape disposed over theside surfaces of the insulation film 30, the gate electrode 20, and theinsulation film 40. Then, as shown in FIG. 10B, the semiconductor layer24 is formed over the wiring layer 100. At this step, the semiconductorlayer 24 is formed in such a manner as to cover the insulation film 30,the gate electrode 20, the insulation film 40, and the gate insulationfilm 22.

Then, as shown in FIG. 11A, the entire surface of the semiconductorlayer 24 is etched back. As a result, the semiconductor layer 24 can beprocessed into a prescribed shape, namely, a shape disposed over theside surfaces of the insulation film 30, the gate electrode 20, and theinsulation film 40 via the gate insulation film 22. Then, as shown inFIG. 11B, the diffusion preventive film 222 is formed over the wiringlayer 100. The diffusion preventive film 222 is formed in such a manneras to cover the insulation film 30, the gate electrode 20, theinsulation film 40, the gate insulation film 22, and the semiconductorlayer 24.

Then, as shown in FIG. 12A, the interlayer insulation film 220 is formedover the diffusion preventive film 222. Then, as shown in FIG. 12B, inthe interlayer insulation film 220 and the diffusion preventive film222, there are formed openings for embedding the wire 202 and the via212, and the wire 206 and the via 216 therein, respectively. Then, overthe sidewalls of the openings, there are formed the barrier metal film232 and the barrier metal film 236. Then, a metal film is formed overthe wiring layer 200 and in the openings. Then, the metal film over theinterlayer insulation film 220 is removed by, for example, CMP. Thisresults in the wiring layer 200 shown in FIG. 1. Then, for example, overthe wiring layer 200, another wiring layer is formed, resulting in thesemiconductor device 300 in accordance with the present embodiment.

Incidentally, as shown in FIG. 12B, in the present embodiment, the wire202 and the via 212, and the wire 206 and the via 216 were formed by adual damascene method. However, the method is not limited thereto, andthe wire 202 and the via 212, and the wire 206 and the via 216 may beformed by, for example, a single damascene method. Alternatively, thewire 202 and the wire 206 may be formed by, for example, patterning themetal film disposed over the interlayer insulation film 220 by dryetching or the like.

Then, the effects of the present embodiment will be described. In thesemiconductor element described in Patent Document 1, the two wiresdisposed in the same wiring layer serve as source/drain electrodes.Whereas, the gate electrode is formed of a wire disposed under thesource/drain electrodes, and arranged between the source/drainelectrodes in plan view. For this reason, the channel length of thesemiconductor element is defined by the space between the two wiresforming the source/drain electrodes. In this case, the channel lengthminiaturization limit is restricted by the resolution limit of thelithography for use in the wire formation. In the wiring layer arrangedat the top of the multilayer wiring layer, such as the global wiringlayer, the design dimensions such as the line width of the wire and thepitch are larger than those of other layers. In this case, theresolution limit of the lithography is restricted by such large designdimensions. Accordingly, it becomes difficult to miniaturize the channellength.

In accordance with the present embodiment, the wire 102 disposed in thewiring layer 100, and the wire 202 disposed in the wiring layer 200stacked over the wiring layer 100 form the source/drain electrodes.Further, the gate electrode 20 is disposed between the wire 102 and thewire 202. For this reason, the channel length of the transistor 10disposed in the wiring layer is determined by the film thickness of thegate electrode 20. In this case, the channel length of the transistor 10is not restricted by the resolution limit of the lithography for use inthe wire formation. Therefore, the channel length of the semiconductorelement disposed in the multilayer wiring layer can be shortened forimproving the performances of the semiconductor element.

Whereas, in accordance with the present embodiment, the channel lengthof the transistor 10 is not restricted by the resolution limit of thelithography for use in the wire formation. For this reason, even when asemiconductor element is disposed in the wiring layer arranged at thetop of the multilayer wiring layer, such as the global wiring layer, itis possible to miniaturize the channel length. Further, shortening ofthe channel length enables the improvement of the performances of thetransistor such as the reduction of the ON resistance. For this reasonit is possible to improve the performances of the transistor whilekeeping constant the in-plane density of the transistor.

In Patent Document 1, the gate electrode is formed of a Cu wire.Whereas, the gate insulation film is formed of a Cu diffusion preventivefilm formed over the wiring layer having the gate electrode. In thiscase, the materials for and the film thicknesses of the gate electrodeand the gate insulation film cannot be arbitrarily selected. Incontrast, in accordance with the present embodiment, the gate electrode20 is separately formed from the wire disposed in the wiring layer 200.Whereas, the gate insulation film 22 is separately disposed from thediffusion preventive film 222 disposed over the wiring layer 100.Accordingly, the materials for and the film thicknesses of the gateelectrode 20 and the gate insulation film 22 can be arbitrarilyselected.

As described above, by properly selecting the materials for and the filmthicknesses of the gate electrode and the gate insulation film, it ispossible to suppress the short channel effect even when the channellength is miniaturized. Whereas, by properly selecting the material forthe gate electrode, it is possible to arbitrarily select the workfunction of the gate electrode. Accordingly, it is possible to controlthe threshold voltage of the semiconductor element. As a result, forexample, it becomes possible to set the semiconductor element to be anyof the normally on type or the normally off type.

In Patent Document 1, the gate insulation film is also allowed tofunction as a Cu diffusion barrier film. In this case, the gateinsulation film is required to have a film thickness enough to implementthe function as the Cu diffusion barrier film. Further, in this case,the gate insulation film is required to be formed of a material having afunction as the Cu diffusion barrier film. In contrast, in accordancewith the present embodiment, the film thickness of the gate insulationfilm 22 can be arbitrarily selected. For this reason, it becomespossible to reduce the thickness of the gate insulation film forimproving the performances of the semiconductor element. Further, inaccordance with the present embodiment, the material for the gateinsulation film 22 can be arbitrarily selected. For this reason, forexample, it becomes possible to control the trap density in the gateinsulation film, or the like for improving the reliability of thesemiconductor element.

FIG. 13 is a cross-sectional view showing a semiconductor device 302 inaccordance with a second embodiment, and corresponds to FIG. 1 in thefirst embodiment. In the semiconductor device 302 in accordance with thepresent embodiment, there are disposed the wire 204 and the via 214, andthere are not disposed the wire 104 and the via 114. Except for thesepoints, the semiconductor device 302 in accordance with the presentembodiment is the same as the semiconductor device 300 in accordancewith the first embodiment.

As shown in FIG. 13, the semiconductor device 302 includes the wire 204and the via 214 disposed in the wiring layer 200. The via 214 isdisposed under the wire 204, and is coupled with the wire 204. Further,the via 214 is disposed penetrating through the diffusion preventivefilm 222 and the insulation film 40, and is coupled with the gateelectrode 20. Accordingly, in the present embodiment, a gate voltage isapplied via the wire 204 to the gate electrode 20. The wire 204 isembedded in the interlayer insulation film 220. Further, the wire 204 isformed by the same step as that for the wire 202. For this reason, thewire 204 is formed of the same material as that for the wire 202.Incidentally, the wire 204 may be formed by a single damascene method,or may be formed by a dual damascene method. Alternatively, the wire 204may have, for example, a structure obtained by selectively removing themetal film by dry etching.

At the sidewall of a trench or a hole for embedding the wire 204 and thevia 214 therein, there is formed a barrier metal film 234. The barriermetal film 234 is formed of, for example, the same material as that forthe barrier metal film 232.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the first embodiment.

FIG. 14 is a cross-sectional view showing a semiconductor device 304 inaccordance with a third embodiment, and corresponds to FIG. 1 inaccordance with the first embodiment. The semiconductor device 304 inaccordance with the present embodiment includes an insulation film 26.Except for this point, the semiconductor device 304 in accordance withthe present embodiment has the same configuration as that of thesemiconductor device 300 in accordance with the first embodiment.

As shown in FIG. 14, the insulation film 26 is disposed over the sidesurfaces of the insulation film 30, the gate electrode 20, and theinsulation film 40 via the gate insulation film 22 and the semiconductorlayer 24. The insulation film 26 is formed of, for example, SiN or SiO₂.Whereas, the film thickness of the insulation film 26 in the planedirection horizontal to the substrate 60 plane is, for example, 10 to100 nm.

The method for manufacturing the semiconductor device 304 in accordancewith the present embodiment is as follows. First, through the same stepsas the manufacturing steps of the first embodiment shown in FIGS. 5A and5B to 10A and 10B, and FIG. 11A, the structure shown in FIG. 11A isobtained. Then, the insulation film 26 is formed over the wiring layer100. The insulation film 26 is formed in such a manner as to cover theinsulation film 30, the gate electrode 20, the insulation film 40, thegate insulation film 22, and the semiconductor layer 24. Then, theentire surface of the insulation film 26 is etched back. As a result,the insulation film 26 can be processed into a prescribed shape, namely,a shape disposed over the side surfaces of the insulation film 30, thegate electrode 20, and the insulation film 40 via the gate insulationfilm 22 and the semiconductor layer 24. Then, through the same steps asthe manufacturing steps of the first embodiment shown in FIGS. 11B and12A and 12B, there is formed the semiconductor device 304.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the first embodiment. Further, in accordance withthe present embodiment, the insulation film 26 is disposed between thediffusion preventive film 222 and the semiconductor layer 24. For thisreason, even when the thickness of the diffusion preventive film 222 isnot sufficient, it becomes possible to separate the channel region 50formed of the semiconductor layer 24 from the surroundings thereof.Further, it is possible to shorten the time during which thesemiconductor film 24 is exposed in manufacturing of the presentsemiconductor device. Accordingly, it is possible to obtain stablecharacteristics.

FIG. 15 is a cross-sectional view showing a semiconductor device 306 inaccordance with a fourth embodiment, and corresponds to FIG. 1 in thefirst embodiment. In the semiconductor device 306 in accordance with thepresent embodiment, the insulation film 30 is formed of a lower layerinsulation film 34 and an upper layer insulation film 36. Except forthis point, the semiconductor device 306 in accordance with the presentembodiment has the same configuration as that of the first embodiment.

As shown in FIG. 15, the insulation film 30 is formed of the lower layerinsulation film 34, and the upper layer insulation film 36 disposed overthe lower layer insulation film 34. The upper layer insulation film 36is formed of a different material from that for the lower layerinsulation film 34. As the material for the lower layer insulation film34, there can be selected the one functioning as an etching stopper filmfor patterning the upper layer insulation film 36 by etching asdescribed later. The lower layer insulation film 34 is formed of, forexample, a silicon nitride film. The upper layer insulation film 36 isformed of, for example, a silicon oxide film. The film thickness of thelower layer insulation film 34 is, for example, 10 to 50 nm. The filmthickness of the upper layer insulation film 36 is, for example, 10 to50 nm.

Then, a description will be given to a method for manufacturing thesemiconductor device 306 in accordance with the present embodiment.FIGS. 16A and 16B to 21A and 21B are each a cross-sectional view showinga method for manufacturing the semiconductor device 306 shown in FIG.15. First, as shown in FIG. 16A, the wiring layer 100 is formed. Thewiring layer 100 forms a part of the multilayer wiring layer disposedover the substrate 60. Incidentally, the wiring layer 100 can be formedin the same manner as in the first embodiment. Then, as shown in FIG.16B, the insulation film 30 is formed over the wiring layer 100. Theinsulation film 30 is formed of the lower layer insulation film 34, andthe upper layer insulation film 36 stacked over the lower layerinsulation film 34.

Then, as shown in FIG. 17A, the resist film 250 is formed over theinsulation film 30. Then, the resist film 250 is exposed to light, andis developed, so that the opening 252 arranged over the wire 104 in planview is formed in the resist film 250. Incidentally, the opening 252 isdisposed in such a manner as to be arranged inside the wire 104 in planview. Then, as shown in FIG. 17B, by dry etching using the resist film250 as a mask, or the like, a portion of the upper layer insulation film36 arranged under the opening 252 is selectively removed. As a result,an opening 38 is formed in the upper layer insulation film 36. In theetching step, the lower layer insulation film 34 functions as an etchingstopper film. Therefore, the lower layer insulation film 34 is leftunder the opening 38.

Then, as shown in FIG. 18A, the resist film 250 is removed. The resistfilm 250 is removed by a method such as ashing. During the ashingtreatment, the wire 104 is covered with the lower layer insulation film34, and is not exposed. Therefore, it is possible to inhibit the wire104 from being subjected to ashing and from being deteriorated. Then, asshown in FIG. 18B, by dry etching using the upper layer insulation film36 as a mask, or the like, the lower layer insulation film 34 arrangedunder the opening 38 is selectively removed. As a result, the opening 32is formed in the insulation film 30. At this step, the wire 104 isexposed above the insulation film 30 via the opening 32.

Then, as shown in FIG. 19A, the gate electrode 20 is formed over theinsulation film 30 and in the opening 32. Then, the insulation film 40is formed over the gate electrode 20. Then, as shown in FIG. 19B, theresist film 254 is formed. The resist film 254 is formed by exposing tolight and developing the resist film disposed over the insulation film40.

Then, as shown in FIG. 20A, by dry etching using the resist film 254 asa mask, or the like, the insulation film 40 is selectively removed. As aresult, the insulation film 40 is processed into a prescribed shape.Then, as shown in FIG. 20B, the resist film 254 is removed. The resistfilm 254 is removed by a method such as ashing. In the ashing treatment,the wires (e.g., the wire 102 and the wire 106) disposed in the wiringlayer 100 are covered with the gate electrode 20 and the like, and arenot exposed. Therefore, it is possible to inhibit the wires from beingsubjected to ashing, and from being deteriorated.

Then, as shown in FIG. 21A, by dry etching using the insulation film 40as a mask, or the like, the insulation film 30 and the gate electrode 20are selectively removed. As a result, the insulation film 30 and thegate electrode 20 are processed into a prescribed shape. Then, as shownin FIG. 21B, the gate insulation film 22 and the semiconductor layer 24are formed over the side surfaces of the insulation film 30, the gateelectrode 20, and the insulation film 40. Incidentally, the gateinsulation film 22 and the semiconductor layer 24 can be formed in thesame manner as in the first embodiment. Then, as with the firstembodiment, the wiring layer 200 is formed. Then, for example, over thewiring layer 200, another wiring layer is formed, resulting in thesemiconductor device 306 in accordance with the present embodiment.

Then, the effects of the present embodiment will be described. In themanufacturing step of the semiconductor device, the wire may bedeteriorated due to the ashing treatment for removing the resist film.In the present embodiment, the insulation film 30 is formed of the lowerlayer insulation film 34, and the upper layer insulation film 36disposed over the lower layer insulation film 34, and formed of adifferent material from that for the lower layer insulation film 34. Asa result, as shown in FIG. 18A, in the step of removing the resist film250 by ashing, the wire 104 can be protected by the lower layerinsulation film 34. Therefore, it is possible to inhibit thedeterioration of the wire in the ashing treatment for removing theresist film.

Further, in the present embodiment, as shown in FIG. 20A, using theresist film 254 as a mask, the insulation film 40 is selectivelyremoved. Then, the resist film 254 is removed by an ashing treatment.Then, using the insulation film 40 as a mask, the insulation film 30 andthe gate electrode 20 are patterned. Accordingly, in the step ofremoving the resist film 254, the wires disposed in the wiring layer 100can be protected by the insulation film 30 and the gate electrode 20.Therefore, it is possible to inhibit the deterioration of the wire inthe ashing treatment for removing the resist film.

FIG. 22 is a cross-sectional view showing a semiconductor device 308 inaccordance with a fifth embodiment, and corresponds to FIG. 15 in thefourth embodiment. In the semiconductor device 308 in accordance withthe present embodiment, the insulation film 40 is formed of a lowerlayer insulation film 44 and an upper layer insulation film 46. Exceptfor this point, the semiconductor device 308 in accordance with thepresent embodiment has the same configuration as that of semiconductordevice 306 in accordance with the fourth embodiment.

As shown in FIG. 22, the insulation film 40 is formed of the lower layerinsulation film 44, and the upper layer insulation film 46 disposed overthe lower layer insulation film 44. The upper layer insulation film 46is formed of a different material from that for the lower layerinsulation film 44. The lower layer insulation film 44 is formed of, forexample, SiN or SiO₂. The upper layer insulation film 46 is formed of,for example, SiN or SiO₂. The film thickness of the lower layerinsulation film 44 is, for example, 5 to 50 nm. The film thickness ofthe upper layer insulation film 46 is, for example, 5 to 50 nm.

Then, a description will be given to a method for manufacturing thesemiconductor device 308 in accordance with the present embodiment.FIGS. 23A and 23B to 25A and 25B, and 63A and 63B are each across-sectional view showing a method for manufacturing thesemiconductor device 308 shown in FIG. 22. First, through the samemanufacturing steps of the fourth embodiment shown in FIGS. 16A and 16Bto 18A and 18B, the structure shown in FIG. 18B is obtained. Then, asshown in FIG. 23A, the gate electrode 20 is formed over the insulationfilm 30 and in the opening 32. Then, the insulation film 40 is formedover the gate electrode 20. The insulation film 40 is formed of thelower layer insulation film 44, and the upper layer insulation film 46stacked over lower layer insulation film 44. Then, as shown in FIG. 23B,the resist film 254 is formed. The resist film 254 is formed by exposingto light and developing the resist film disposed over the insulationfilm 40.

Then, as shown in FIG. 24A, by dry etching using the resist film 254 asa mask, or the like, the lower layer insulation film 44 and the upperlayer insulation film 46 are selectively removed. As a result, theinsulation film 40 is processed into a prescribed shape. Then, as shownin FIG. 24B, the resist film 254 is removed. The resist film 254 isremoved by a method such as ashing.

Incidentally, the insulation film 40 may be processed, for example, inthe following manner. After the step shown in FIG. 23B, as shown in FIG.63A, by dry etching using the resist film 254 as a mask, or the like,the upper layer insulation film 46 is selectively removed. As a result,the upper layer insulation film 46 is processed into a prescribed shape.Then, as shown in FIG. 63B, the resist film 254 is removed. The resistfilm 254 is removed by a method such as ashing. Then, by dry etchingusing the upper layer insulation film 44 as a mask, or the like, thelower layer insulation film 46 is selectively removed. As a result, asshown in FIG. 24B, the insulation film 40 is processed into a prescribedshape.

Then, as shown in FIG. 25A, by dry etching using the insulation film 40as a mask, or the like, the insulation film 30 and the gate electrode 20are selectively removed. As a result, the insulation film 30 and thegate electrode 20 are each processed into a prescribed shape. Then, asshown in FIG. 25B, the gate insulation film 22 and the semiconductorlayer 24 are formed over the side surfaces of the insulation film 30,the gate electrode 20, and the insulation film 40. Incidentally, thegate insulation film 22 and the semiconductor layer 24 can be formed inthe same manner as in the first embodiment. Then, as with the firstembodiment, the wiring layer 200 is formed. Then, for example, anotherwiring layer is formed over the wiring layer 200, resulting in thesemiconductor device 308 in accordance with the present embodiment.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the fourth embodiment. Further, in accordance withthe present embodiment, using the resist film 254, the upper layerinsulation film 46 is etched, and the resist film 254 is removed byashing. Then, using the patterned upper layer insulation film 46 as amask, the lower layer insulation film 44 can be etched. As a result,even when the gate electrode 20 is formed of a material undesirable forbeing directly subjected to ashing, it is possible to process theinsulation film 40 without exposing the gate electrode 20 to the ashingenvironment. This results in more choices for the materials to be usedfor the gate electrode 20.

FIG. 26 is a cross-sectional view showing a semiconductor device 310 inaccordance with a sixth embodiment, and corresponds to FIG. 1 inaccordance with the first embodiment. The semiconductor device 310 inaccordance with the present embodiment includes a conductive film 260.Further, the semiconductor device 310 includes an insulation film 224and an insulation film 226 disposed over the wiring layer 100. Exceptfor these points, the semiconductor device 310 has the sameconfiguration as that of the semiconductor device 300 in accordance withthe first embodiment.

As shown in FIG. 26, the semiconductor device 310 includes theconductive film 260. The conductive film 260 is disposed over the wire102. Accordingly, the wire 102 is coupled with the semiconductor layer24 via the conductive film 260. The conductive film 260 is disposed, forexample, in such a manner as to be arranged inside the wire 102 in planview. The conductive film 260 is formed of, for example, Ti, Ta, W, Al,TiN, TaN, or WN, a compound including Co or W, or a material obtained byintroducing at least one of C and O to any of them. The conductive film260 may be a single layer formed of any of the materials, or may be alamination of two or more layers. The film thickness of the conductivefilm 260 is, for example, 10 to 50 nm.

The insulation film 224 is formed over the wiring layer 100. Theinsulation film 224 is formed over the entire surface of the wiringlayer 100 except for the region including the via formed therein, andthe region including the conductive film 260 formed therein. As thematerial for the insulation film 224, there can be selected the onefunctioning as an etching stopper film for patterning the insulationfilm 226 by etching as described later. The insulation film 224 isformed of, for example, a silicon nitride film. Further, the insulationfilm 226 is formed over the insulation film 224. The insulation film 226is formed in the region overlapping the gate electrode 20, the gateinsulation film 22, and the semiconductor layer 24 in plan view exceptfor the region including the conductive film 260 formed therein, and theregion including the opening 32 formed therein. The insulation film 226is formed of, for example a silicon oxide film. In the presentembodiment, the insulation film 30 is formed over the insulation film226. Whereas, the diffusion preventive film 222 is formed over theinsulation film 224 in such a manner as to cover the insulation film 30,the gate electrode 20, the insulation film 40, the gate insulation film22, and the semiconductor layer 24.

Then, a description will be given to a method for manufacturing thesemiconductor device 310 in accordance with the present embodiment.FIGS. 27A and 27B to 33A and 33B are each a cross-sectional view showinga method for manufacturing the semiconductor device 310 in accordancewith the present embodiment. First, as shown in FIG. 27A, the wiringlayer 100 is formed. The wiring layer 100 forms a part of the multilayerwiring layer disposed over the substrate 60. Incidentally, the wiringlayer 100 can be formed in the same manner as with the first embodiment.Then, as shown in FIG. 27B, an insulation film 224 is formed over thewiring layer 100. Then, the insulation film 226 is formed over theinsulation film 224.

Then, as shown in FIG. 28A, the resist film 256 is formed over theinsulation film 226. Then, resist film 256 is exposed to light, and isdeveloped, so that an opening 258 arranged over the wire 102 in planview is formed in the resist film 256. Incidentally, the opening 258 isdisposed in such a manner as to be arranged inside the wire 102 in planview. Then, as shown in FIG. 28B, by dry etching using the resist film256 as a mask, or the like, the portion of the insulation film 226arranged under the opening 258 is selectively removed. As a result, anopening 264 is formed in the insulation film 226. In the etching step,the insulation film 224 functions as an etching stopper film. Therefore,the insulation film 224 is left under the opening 256.

Then, as shown in FIG. 29A, the resist film 256 is removed. The resistfilm 256 is removed by a method such as ashing. In the ashing treatment,the wire 102 is covered with the insulation film 224, and is notexposed. Therefore, it is possible to inhibit the wire 102 from beingsubjected to ashing and from being deteriorated. Then, as shown in FIG.29B, by dry etching using the insulation film 226 as a mask, or thelike, the insulation film 224 arranged under the opening 264 isselectively removed. This results in the formation of the opening 265penetrating through the insulation film 224 and the insulation film 226.At this step, the wire 102 is exposed above the insulation film 226 viathe opening 265.

Then, as shown in FIG. 30A, the conductive film 260 is formed over theinsulation film 226, and in the opening 265. Then, as shown in FIG. 30B,by, for example, CMP (Chemical Mechanical Polishing), the conductivefilm 260 is planarized. As a result, the conductive film 260 over theinsulation film 226 is removed, and the conductive film 260 in theopening 265 is left.

Then, as shown in FIG. 31A, the insulation film 30 is formed over theinsulation film 226, and over the conductive film 260. Then, as shown inFIG. 31B, the resist film 250 is formed over the insulation film 30.Then, the resist film 250 is exposed to light, and is developed, so thatthe opening 252 arranged over the wire 104 in plan view is formed in theresist film 250. Incidentally, the opening 252 is disposed in such amanner as to be arranged inside the wire 104 in plan view.

Then, as shown in FIG. 32A, by dry etching using the resist film 250 asa mask, or the like, the portion of the insulation film 30 arrangedunder the opening 30 is selectively removed. As a result, the opening 38is formed in the insulation film 30. As shown in FIG. 32A, by theetching step, the insulation film 226 arranged under the opening 252 isalso selectively removed. Incidentally, the insulation film 226 may beleft under the opening 252 after the etching step. Then, as shown inFIG. 32B, the resist film 250 is removed. The resist film 250 is removedby a method such as ashing. In the ashing treatment, the wire 104 iscovered with the insulation film 224, and is not exposed. Therefore, itis possible to inhibit the wire 104 from being subjected to ashing andfrom being deteriorated.

Then, as shown in FIG. 33A, by dry etching using the insulation film 30as a mask, or the like, the insulation film 224 arranged under theopening 38 is selectively removed. This results in the formation of theopening 32 penetrating through the insulation film 224, the insulationfilm 226, and the insulation film 30. At this step, the wire 104 isexposed above the insulation film 30 via the opening 32.

Then, as shown in FIG. 33B, the gate electrode 20 is formed over theinsulation film 30 and in the opening 32. Then, the insulation film 40is formed over the gate electrode 20. Then, as shown in FIG. 34A, theresist film 254 is formed. Then, as shown in FIG. 34B, by dry etchingusing the resist film 254 as a mask, or the like, the insulation film 40is selectively removed. Then, as shown in FIG. 35A, the resist film 254is removed by a method such as ashing. Then, as shown in FIG. 35A, bydry etching using the insulation film 40 as a mask, or the like, thegate electrode 20 is selectively removed. At this step, the gateelectrode 20 is processed so that a part of the end of the gateelectrode 20 overlaps the conductive film 260 in plan view. These stepscan be performed in the same manner as with the manufacturing steps ofthe fourth embodiment shown in FIGS. 19A and 19B, 21A and 21B, and 22A.

Then, as shown in FIG. 36, the gate insulation film 22 and thesemiconductor layer 24 are successively formed over the side surfaces ofthe insulation film 30, the gate electrode 20, and the insulation film40. The steps can be performed in the same manner as with themanufacturing steps of the first embodiment shown in FIGS. 9B, 10A and10B, and 11A. In the present embodiment, in the step of entirely etchingback the gate insulation film 22 and the semiconductor layer 24, thewire 102 is covered with the conductive film 260, and is not exposed.This can suppress the formation of the etching product resulting fromexposure of the wire 102 to etching. Incidentally, in the step ofentirely etching back the gate insulation film 22 and the semiconductorlayer 24, the insulation film 226 arranged in the region not overlappingthe gate electrode 20, the gate insulation film 22, and thesemiconductor layer 24 in plan view is also removed similarly.

Then, the diffusion preventive film 222 and the interlayer insulationfilm 220 are formed. Then, respective wires and vias are formed in thediffusion preventive film 222 and the interlayer insulation film 220.This results in the wiring layer 200. These steps can be performed inthe same manner as the manufacturing steps of the first embodiment shownin FIGS. 11B, and 12A and 12B. Thereafter, for example, over the wiringlayer 200, other wiring layers are formed, resulting in thesemiconductor device 310 in accordance with the present embodiment.

Then, the effects of the present embodiment will be described. The wire102 is exposed to etching, resulting in the formation of etchingproducts around the wire 102. This becomes particularly remarkable inthe case of, for example, a copper wire. When the etching productsresulting from the wire 102 are deposited around the gate electrode 20,a malfunction of the transistor 10, and the like are caused. Inaccordance with the present embodiment, in the step of entirely etchingback the gate insulation film 22 and the semiconductor layer 24, thewire 102 is not exposed to etching. For this reason, it is possible tosuppress the formation of etching products from the wire 102 in theetching back step. Therefore, it is possible to prevent the occurrenceof a malfunction of the transistor, and the like for improving thereliability of the semiconductor device.

Further, in accordance with the present embodiment, the wire 102 iscoupled with the semiconductor layer 24 via the conductive film 260formed of a different material from that for the wire 102. For thisreason, it is possible to suppress the diffusion of copper which is thematerial forming the wire 102 into the semiconductor layer 24.

Further, in accordance with the present embodiment, it is possible toobtain the same effects as those of the first embodiment.

FIG. 37 is a cross-sectional view showing a semiconductor device 312 inaccordance with a seventh embodiment, and corresponds to FIG. 26 in thesixth embodiment. The semiconductor device 312 in accordance with thepresent embodiment includes a conductive film 262. Except for thispoint, the semiconductor device 312 in accordance with the presentembodiment has the same configuration as that of the semiconductordevice 310 in accordance with the sixth embodiment.

As shown in FIG. 37, the semiconductor device 312 includes theconductive film 262. The conductive film 262 is disposed over the wire104. Accordingly, the wire 104 is coupled with the gate electrode 20 viathe conductive film 262. The conductive film 262 is formed of adifferent material from that for the wire 104. The conductive film 262is formed in the same step as that for the conductive film 260. For thisreason, the conductive film 262 is formed of the same material as thatfor the conductive film 260. The conductive film 260 and the conductivefilm 262 are each formed of, for example, Ti, Ta, W, Al, TiN, TaN, orWN, a compound including Co or W, or a material obtained by introducingat least one of C and O to any of them. The conductive film 260 and theconductive film 262 may be a single layer formed of any of thematerials, or may be a lamination of two or more layers. Each filmthickness of the conductive film 260 and the conductive film 262 is, forexample, 10 to 50 nm. In the present embodiment, the conductive film 260and the conductive film 262 are formed by patterning the conductive film270 disposed over the insulation film 226 by dry etching or the like asdescribed later.

Then, a description will be given to a method for manufacturing thesemiconductor device 312 in accordance with the present embodiment.FIGS. 38A and 38B to 43A and 43B are each a cross-sectional view showinga method for manufacturing the semiconductor device 312 in accordancewith the present embodiment. First, the wiring layer 100 is formed.Then, over the wiring layer 100, there are formed the insulation film224 and the insulation film 226. These steps can be performed in thesame manner as the manufacturing steps of the sixth embodiment shown inFIGS. 27A and 27B. Then, the openings 265 arranged over the wire 102 andover the wire 104 are formed in the insulation film 224 and theinsulation film 226. The openings 265 can be formed in the same manneras with the manufacturing step of the sixth embodiment shown in FIGS.28A and 28B and 29A and 29B. As a result, the structure shown in FIG.38A can be obtained.

Then, as shown in FIG. 38B, a conductive film 270 is formed over theinsulation film 226, and in the openings 265. The conductive film 270 isformed of the material forming the conductive film 260 and theconductive film 262. Then, as shown in FIG. 39A, a resist film 272 isformed. The resist film 272 is disposed so that the portions of theresist film 272 disposed over respective regions of a region overlappingthe wire 102 in plan view and a region overlapping the wire 104 in planview are separated from each other. The resist film 272 is formed byexposing to light and developing the resist film disposed over theconductive film 270. Then, as shown in FIG. 39B, by dry etching usingthe resist film 272 as a mask, or the like, the conductive film 270 isselectively removed. As a result, the conductive film 260 is formed overthe wire 102, and the conductive film 262 is formed over the wire 104.

Then, as shown in FIG. 40A, the resist film 272 is removed by a methodsuch as ashing. Then, as shown in FIG. 40B, the insulation film 30 isformed over the insulation film 226. The insulation film 30 is formed insuch a manner as to cover the conductive film 260 and the conductivefilm 262.

Then, as shown in FIG. 41A, the resist film 250 is formed over theinsulation film 30. Then, the resist film 250 is exposed to light, andis developed, so that the opening 252 arranged over the conductive film262 in plan view is, formed in the resist film 250. Incidentally, theopening 252 is disposed in such a manner as to be arranged inside theconductive film 262 in plan view. Then, as shown in FIG. 41B, by dryetching using the resist film 250 as a mask, or the like, the portion ofthe insulation film 30 arranged under the opening 252 is selectivelyremoved. As a result, the opening 32 is formed in the insulation film30. At this step, the conductive film 262 is exposed above theinsulation film 30 via the opening 32.

Then, as shown in FIG. 42A, the resist film 250 is removed by a methodsuch as ashing. Then, as shown in FIG. 42B, the gate electrode 20 isformed over the insulation film 30 and in the opening 32. Then, theinsulation film 40 is formed over the gate electrode 20.

Then, as shown in FIG. 43A, the insulation film 30, the gate electrode20, and the insulation film 40 are patterned into a prescribed shape.The patterning step can be performed in the same manner as with themanufacturing steps of the sixth embodiment shown in FIGS. 34A and 34Band 35A and 35B. Then, as shown in FIG. 43B, the gate insulation film 22and the semiconductor layer 24 are formed over the side surfaces of theinsulation film 30, the gate electrode 20, and the insulation film 40.The steps can be performed in the same manner as with the manufacturingsteps of the first embodiment shown in FIGS. 9B, 10A and 10B, and 11A.

Then, there are formed the diffusion preventive film 222 and theinterlayer insulation film 220. Then, respective wires and vias areformed in the diffusion preventive film 222 and the interlayerinsulation film 220. This results in the wiring layer 200. The steps canbe performed in the same manner as with the manufacturing steps of thefirst embodiment shown in FIGS. 11B and 12A and 12B. Thereafter, forexample, other wiring layers are formed over the wiring layer 200,resulting in the semiconductor device 312 in accordance with the presentembodiment.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the sixth embodiment.

FIG. 44 is a cross-sectional view showing a semiconductor device 314 inaccordance with an eighth embodiment, and corresponds to FIG. 1 in thefirst embodiment. FIG. 45 is a plan view showing the semiconductordevice 314 shown in FIG. 44, and corresponds to FIG. 2 in the firstembodiment. FIG. 44 shows a B-B′ cross section in FIG. 45. FIG. 45 showsan A-A′ plane in FIG. 44. The semiconductor device 314 in accordancewith the present embodiment has the same configuration as that of thesemiconductor device 300 in accordance with the first embodiment exceptfor the configurations of the wire 102 and the via 212.

In the semiconductor device 314, the region of overlap between the topsurface of the wire 102 and the bottom surface of the via 212 in planview does not include one side of the gate electrode 20, and includes apart of each of two sides adjacent to the one side. In the presentembodiment, the gate electrode 20 is a rectangle. As shown in FIGS. 44and 45, the region of overlap between the top surface of the wire 102and the bottom surface of the via 212 does not include the short side ofthe gate electrode 20, and includes apart of each of two long sidesadjacent to the short side.

In the present embodiment, the portion of the semiconductor layer 24disposed adjacent to the part of the gate electrode 20 included in theregion of overlap between the top surface of the wire 102 and the bottomsurface of the via 212 functions as the channel region 50. In thepresent embodiment, even when a displacement is caused in the positionalrelationship between the wire 102 and the via 212 and the gate electrode20, each length of the sides of the gate electrode 20 included in theregion of overlap between the top surface of the wire 102 and the bottomsurface of the via 212 becomes constant. In this case, the channel widthof the channel region 50 is also kept constant.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the first embodiment. Further, in accordance withthe present embodiment, the region of overlap between the top surface ofthe wire 102 and the bottom surface of the via 212 in plan view does notinclude one side of the gate electrode 20, and includes a part of eachof two sides adjacent to the one side. In this case, even when adisplacement is caused in the positional relationship between the wire102 and the via 212 and the gate electrode 20 due to fluctuations inprocess and the like, the channel width is kept constant. For thisreason, it is possible to suppress the occurrence of variations incharacteristics among semiconductor elements.

FIG. 46 is a cross-sectional view showing a semiconductor device 316 inaccordance with a ninth embodiment, and corresponds to FIG. 44 in theeighth embodiment. Whereas, FIG. 47 is a plan view showing thesemiconductor device 316 shown in FIG. 46, and corresponds to FIG. 45 inthe eighth embodiment. FIG. 45 shows a B-B′ cross section in FIG. 46.FIG. 46 shows an A-A′ plane in FIG. 45. The semiconductor device 316 inaccordance with the present embodiment has the same configuration asthat of the semiconductor device 314 in accordance with the eightembodiment except for the configuration of the via 212.

In the semiconductor device 316, in the direction of extension of thetwo sides of the gate electrode 20 arranged in the region of overlapbetween the top surface of the wire 102 and the bottom surface of thevia 212, one of the top surface of the wire 102 and the bottom surfaceof the via 212 is arranged inside the other in plan view. In the presentembodiment, the gate electrode 20 is a rectangle. As shown in FIGS. 46and 47, in the semiconductor device 316 in accordance with the presentembodiment, the bottom surface of the via 212 is arranged inside the topsurface of the wire 102 in plan view. Namely, in the direction ofextension of the long sides of the gate electrode 20, the bottom surfaceof the via 212 is arranged inside the top surface of the wire 102. Inthis case, even when a displacement is caused in the positionalrelationship between the top surface of the wire 102 and the bottomsurface of the via 212, the size of the region of overlap between thetop surface of the wire 102 and the bottom surface of the via 212 iskept constant. In this case, the channel width of the channel region 50is also kept constant. Incidentally, in the present embodiment, in thedirection of extension of the long sides of the gate electrode 20, thetop surface of the wire 102 may be arranged inside the bottom surface ofthe via 212 in plan view.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the eighth embodiment. Further, in the direction ofextension of the two sides of the gate electrode 20 arranged in theregion of overlap between the top surface of the wire 102 and the bottomsurface of the via 212, one of the top surface of the wire 102 and thebottom surface of the via 212 is arranged inside the other in plan view.In this case, even when a displacement is caused in the positionalrelationship between the top surface of the wire 102 and the bottomsurface of the via 212 due to fluctuations in process and the like, thechannel width is kept constant. For this reason, it is possible tosuppress the occurrence of variations in characteristics amongsemiconductor elements.

FIG. 48 is a plan view showing a semiconductor device 318 in accordancewith a tenth embodiment, and corresponds to FIG. 2 in the firstembodiment. The semiconductor device 318 in accordance with the presentembodiment has the same configuration as that of the semiconductordevice 300 in accordance with the first embodiment except for theconfigurations of the wire 102 and the via 212.

In the semiconductor device 318 in accordance with the presentembodiment, the region of overlap between the top surface of the wire102 and the bottom surface of the via 212 in plan view includes at leasta part of one side of the gate electrode 20, and does not include twosides adjacent to the one side. In the present embodiment, the gateelectrode 20 is a rectangle. As shown in FIG. 48, in the direction ofextension of the short sides of the gate electrode 20, the bottomsurface of the via 212 is shorter than the short side of the gateelectrode 20. For this reason, the region of overlap between the topsurface of the wire 102 and the bottom surface of the via 212 includes apart of the short side of the gate electrode 20, and does not includethe two long sides thereof.

In the present embodiment, the portion of the semiconductor layer 24adjacent to the part of the gate electrode 20 included in the region ofoverlap between the top surface of the wire 102 and the bottom surfaceof the via 212 functions as the channel region 50. For this reason, evenwhen a displacement is caused in the positional relationship between thewire 102 and the via 212 and the gate electrode 20, the length of theside of the gate electrode 20 included in the region of overlap betweenthe top surface of the wire 102 and the bottom surface of the via 212becomes constant. In this case, the channel width of the channel region50 is also kept constant.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the first embodiment. Further, in accordance withthe present embodiment, the region of overlap between the top surface ofthe wire 102 and the bottom surface of the via 212 in plan view includesat least a part of one side of the gate electrode 20, and does notinclude two sides adjacent to the one side. In this case, even when adisplacement is caused in the positional relationship between the wire102 and the via 212 and the gate electrode 20 due to fluctuations inprocess and the like, the channel width is kept constant. For thisreason, it is possible to suppress the occurrence of variations incharacteristics among semiconductor elements.

FIG. 49 is a cross-sectional view showing a semiconductor device 320 inaccordance with an eleventh embodiment, and corresponds to FIG. 1 in thefirst embodiment. Whereas, FIG. 50 is a plan view showing thesemiconductor device 320 shown in FIG. 49, and corresponds to FIG. 2 inthe first embodiment. FIG. 49 shows a B-B′ cross section in FIG. 50.FIG. 50 shows an A-A′ plane in FIG. 49. The semiconductor device 320 inaccordance with the present embodiment forms a CMOS using twotransistors. Except for this point, the semiconductor device 320 inaccordance with the present embodiment has the same configuration asthat of the semiconductor device 300 in accordance with the firstembodiment.

As shown in FIG. 49, a wire 108 and a via 118 are formed in the wiringlayer 100. The via 118 is disposed under the wire 108, and is coupledwith the wire 108. The wire 108 is embedded in the interlayer insulationfilm 120. Further, the wire 108 is formed by, for example, the same stepas that for the wire 102. For this reason, the wire 108 has the samedepth as that of the wire 102, and is formed of the same material.

As shown in FIG. 49, a wire 208 and a via 218 are disposed in the wiringlayer 200. The via 218 is disposed under the wire 208, and is coupledwith the wire 208. The wire 208 is embedded in the interlayer insulationfilm 220. Further, the wire 208 is formed by, for example, the same stepas that for the wire 202. For this reason, the wire 208 has the samedepth as that of the wire 202, and is formed of the same material.Whereas, as shown in FIG. 49, a barrier metal film 238 may be formedover the side surface of a trench or a hole for embedding the wire 208and the via 218 therein. The barrier metal film 238 has, for example,the same material and configuration as those of the barrier metal film232.

The part of the via 218 shown in FIG. 50 shows the bottom surface of thevia 218. Whereas, the part of the wire 108 shown in FIG. 50 shows thetop surface of the wire 108. As shown in FIG. 50, the top surface of thewire 108 and the bottom surface of the via 218 overlap each other inplan view. Whereas, a part of the semiconductor layer 24 is arranged inthe region of overlap between the top surface of the wire 108 and thebottom surface of the via 218.

As shown in FIG. 49, the insulation film 30 is disposed between the gateelectrode 20 and the wire 108. For this reason, the gate electrode 20 isnot coupled with the wire 108. Whereas, the insulation film 40 isdisposed between the gate electrode 20 and the via 218. For this reason,the gate electrode 20 is not coupled with the via 218. The semiconductorlayer 24 is coupled with the wire 108 and the via 218. The portion ofthe semiconductor layer 24 coupled with the wire 102 and the via 212 hasa first conductivity type. Whereas, the portion of the semiconductorlayer 24 coupled with the wire 108 and the via 218 has a secondconductivity type different from the first conductivity type. Byselecting the material forming the semiconductor layer 24, it ispossible to design the conductivity type of the semiconductor layer 24.Herein, the first conductivity type and the second conductivity typemean either of a P type and an N type. In the present embodiment, forexample, the materials for the semiconductor layer 24 are individuallymade, thereby to control the conductivity type at each portion of thesemiconductor layer 24. When one of the portion having the firstconductivity type or the portion having the second conductivity type ofthe semiconductor layer 24 is formed, the region for forming the othertherein is protected by a mask. As a result, it is possible toindividually make the materials for the semiconductor layer 24.

In the present embodiment, the wire 108, the wire 208, the gateelectrode 20, the gate insulation film 22, and the semiconductor layer24 form a transistor 12. A channel region 52 is formed at a portion ofthe semiconductor layer 24 arranged in the region of overlap between thetop surface of the wire 108 and the bottom surface of the via 218.Further, the wire 208 coupled with the semiconductor layer 24 throughthe via 218, and the wire 108 coupled with the semiconductor layer 24function as source/drain electrodes. The insulation film 30 and theinsulation film 40 have a function as a sidewall for defining thedistance between the gate electrode 20 and the source/drain electrode.

In the present embodiment, the semiconductor layer 24 forming thetransistor 12 has the second conductivity type as described above. Forthis reason, the transistor 12 is a transistor of the secondconductivity type. On the other hand, the semiconductor layer 24 formingthe transistor 10 has the first conductivity type. Namely, thetransistor 10 is a transistor of the first conductivity type.Accordingly, the transistor 10 and the transistor 12 form a CMOS. In thepresent embodiment, coupling between the source/drain electrodes of thetransistor 10 and the source/drain electrodes of the transistor 12enables the operation as an inverter.

As shown in FIG. 49, in the present embodiment, as with the secondembodiment, a gate voltage is applied to the gate electrode 20 via thewire 204 disposed in the wiring layer 200. Incidentally, in the presentembodiment, as with the first embodiment, the semiconductor device mayhave a configuration in which a gate voltage is applied to the gateelectrode 20 via the wire 104.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the first embodiment. Further, in accordance withthe present embodiment, it becomes possible to provide a semiconductordevice including a CMOS in the multilayer wiring layer.

FIG. 51 is a cross-sectional view showing a semiconductor device 322 inaccordance with a twelfth embodiment. The semiconductor device 322 inaccordance with the present embodiment includes a functional layer 400and a functional layer 500 each formed of the wiring layer 100 and thewiring layer 200. In the wiring layer 100 and the wiring layer 200forming the functional layer 400 of the multilayer wiring layer disposedover the substrate 60, there is disposed a transistor 14 (10). Whereas,in the wiring layer 100 and the wiring layer 200 forming the functionallayer 500, there is disposed a transistor 15 (10). Further, thetransistor 14 and the transistor 15 have mutually differentcharacteristics. In the present specification, the functional layerdenotes a specific region including elements having specific functionscollected therein in the multilayer wiring layer. In this case, it ispreferable that only circuits and elements each having a specificfunction are formed in the specific region. The specific region means aregion defined by both of the plane direction horizontal to thesubstrate plane, and the direction of stacking of the wiring layers.Incidentally, the functional layer 400 and the functional layer 500 inthe present embodiment are each formed of the wiring layer 100 and thewiring layer 200 disclosed in any of the first to tenth embodiments. Inthe present specification, the transistor 10 disposed in the functionallayer 400 is referred to as the transistor 14, and the transistor 10disposed in the functional layer 500 is referred to as the transistor15.

As shown in FIG. 51, in the semiconductor device 322 in accordance withthe present embodiment, the functional layer 500 is stacked over thefunctional layer 400. In this case, the wiring layer 100 included in thefunctional layer 500 is arranged over the wiring layer 200 included inthe functional layer 400. Incidentally, the functional layer 400 and thefunctional layer 500 may form any portion in the multilayer wiringlayer, and may be, for example, separated from each other.

As shown in FIG. 51, the wiring layer 100 and the wiring layer 200forming the functional layer 400 in the present embodiment have the sameconfiguration as, for example, that of the wiring layer 100 and thewiring layer 200 in accordance with the second embodiment. Namely, inthe functional layer 400, the gate electrode 20 is applied with a gatevoltage via the wire 206 disposed in the wiring layer 200. Whereas, thewiring layer 100 and the wiring layer 200 forming the functional layer500 in the present embodiment have the same configuration as, forexample, that of the wiring layer 100 and the wiring layer 200 inaccordance with the first embodiment. Namely, in the functional layer500, the gate electrode 20 is applied with a gate voltage via the wire106 disposed in the wiring layer 100.

As shown in FIG. 51, the wire 106 of the functional layer 500 and thewire 206 of the functional layer 400 are coupled to each other throughthe via 116 in the functional layer 500. Accordingly, the gate electrode20 of the transistor 14 and the gate electrode 20 of the transistor 15are coupled to each other. Further, as shown in FIG. 51, the wire 202 ofthe functional layer 400 and the wire 102 of the functional layer 500are coupled to each other through the via 112. This results in that oneof the source/drain electrodes of the transistor 14 and one of thesource/drain electrodes of the transistor 15 are coupled to each other.

The transistor 14 and the transistor 15 have mutually differentcharacteristics. Herein, the different characteristics denote, forexample, the conductivity types or the threshold voltages of thetransistors. The conductivity type of the transistor can be designed byselecting the material forming the semiconductor layer 24. Whereas, thethreshold voltage of the transistor can be designed by, for example,selecting the material for the gate electrode 20.

In the present embodiment, the transistor 14 has, for example, the firstconductivity type. Whereas, the transistor 15 has, for example, thesecond conductivity type different from the first conductivity type.Incidentally, herein, the first conductivity type and the secondconductivity type each mean either of a P type and an N type. Further,the transistor 14 and the transistor 15 are coupled to each otherthrough the source/drain electrodes. Further, the gate electrodes 20 ofthe transistor 14 and the transistor 15 are coupled to each other.Accordingly, the semiconductor device 322 has an inverter formed of thetransistor 14 and the transistor 15.

FIG. 52 is a circuit diagram showing the CMOS inverter circuit includedin the semiconductor device 322 shown in FIG. 51. Herein, the transistor14 is set as a P type transistor, and the transistor 15 is set as an Ntype transistor. As shown in FIG. 52, the gate electrodes 20 of thetransistor 14 and the transistor 15 are coupled to an input terminal,and the drain electrodes are coupled to an output terminal. In thiscase, in the transistor 14, the wire 202 serves as the drain electrode,and in the transistor 15, the wire 102 serves as the drain electrode.Whereas, the source electrode of the transistor 14 is grounded, and thesource electrode of the transistor 15 is coupled to a power source. Inthis state, the wire 102 of the transistor 14 serves as a sourceelectrode, and the wire 202 of the transistor 15 serves as a sourceelectrode. By thus designing the circuit, it becomes possible to allowthe semiconductor device 322 in accordance with the present embodimentto operate as an inverter.

FIG. 53 is a cross-sectional view showing a first modified example ofthe semiconductor device 322 shown in FIG. 51. The semiconductor device322 may have the structure of the wiring layer 100 and the wiring layer200 in accordance with the present modified example. As described later,in the semiconductor device 322 in accordance with the present modifiedexample, a wire 420, a wire 430, a semiconductor layer 424, and a gateinsulation film 422 form the transistor 10.

As shown in FIG. 53, in the semiconductor device 322 in accordance withthe present modified example, the wire 420 embedded in the wiring layer100 forms a gate electrode. The wire 420 is formed of, for example, thesame material as that for the wire 102. Over the sidewall of a trenchfor embedding the wire 420 therein, there is formed a barrier metal film421. The barrier metal film 421 is formed of, for example, the samematerial as that for the barrier metal film 232. Further, over the wire420, there is formed the gate insulation film 422 disposed at the samelayer as that of the diffusion preventive film 222. The gate insulationfilm 422 is, for example, thinner than the diffusion preventive film222. The gate insulation film 422 is formed by, for example, forming arecessed part in the top surfaces of the region of the diffusionpreventive film 222 overlapping the wire 420, and its surroundings.

Further, over the gate insulation film 422 and the diffusion preventivefilm 222 arranged therearound, there is formed the semiconductor layer424. The semiconductor layer 424 is formed of, for example, the samematerial as that for the semiconductor layer 24. Further, thesemiconductor layer 424 may be, for example, a polysilicon layer or anamorphous silicon layer. In the semiconductor layer 424, there aredisposed a source and a drain. When the semiconductor film 424 is anoxide semiconductor layer, the source and the drain are formed byintroducing, for example, an oxygen defect, but may be formed byintroducing impurities. When the semiconductor film 424 is a polysiliconlayer or an amorphous silicon layer, the source and the drain are formedby introducing impurities. The region of the semiconductor layer 424interposed between the source and the drain serves as a channel region.

Whereas, in the wiring layer 200, there are formed two wires 430. Thetwo wires 430 are respectively coupled to the source/drain of thesemiconductor layer 424 through the vias 431. Namely, the two wires 430form source/drain electrodes. The wire 430 is formed of, for example,the same material as that for the wire 202. Over the sidewall of atrench or a hole for embedding the wire 430 and the via 431 therein,there is formed a barrier metal film 432. The barrier metal film 432 isformed of, for example, the same material as that for the barrier metalfilm 232. Over the semiconductor layer 424, there is formed a hard maskfilm 428. The hard mask film 428 is used for selectively leaving thesemiconductor film 424 by etching. The hard mask film 428 may bedesirably a material providing an etching selectivity with respect tothe semiconductor film 424. The wire 430 penetrates through the hardmask film 428, and is coupled with the semiconductor layer 424.

As shown in FIG. 53, each functional layer may have, for example, aplurality of transistors. The gate electrodes respectively included inthe plurality of transistors disposed in the same functional layer areformed by the mutually same step. For this reason, respective gateelectrodes are formed of the same material. Further, the semiconductorlayers 424 respectively included in the plurality of transistorsdisposed in the same functional layer are formed by the mutually samestep. For this reason, respective semiconductor layers 424 are formed ofthe same material. Accordingly, the transistors disposed in the samefunctional layer have the same characteristics.

Also in the present modified example, the transistor 14 has, forexample, the first conductivity type. Whereas, the transistor 15 has,for example, the second conductivity type different from the firstconductivity type. Incidentally, herein, the first conductivity type andthe second conductivity type mean either of a P type and an N type. Forthis reason, with the transistor 14 and the transistor 15, respectiveones of the source/drain electrodes are coupled to each other, and thegate electrodes are coupled to each other. This enables the operation asan inverter.

FIG. 54 is a cross-sectional view showing a second modified example ofthe semiconductor device 322 shown in FIG. 51. The semiconductor device322 may have the structure of the wiring layer 100 and the wiring layer200 in accordance with the present modified example. The semiconductordevice 322 in accordance with the present modified example has the sameconfiguration as that of the semiconductor device 322 in accordance withthe first modified example except for the configuration of the gateelectrode and the gate insulation film.

As shown in FIG. 54, in the semiconductor device 322 in accordance withthe present modified example, a gate electrode 440 is formed over thewire 420, and is coupled to the wire 420. The gate electrode 440 isformed by a different step from that for the wire 420. The gateelectrode 440 can be formed of, for example, the same material as thatfor the gate electrode 20. Over the gate electrode 440, there isdisposed a gate insulation film 422. The gate insulation film 422 isformed by a different step from that for the diffusion preventive film222. The gate insulation film 422 is formed of, for example, the samematerial as that for the gate insulation film 22.

Then, the effects of the present embodiment will be described. When twotransistors having mutually different characteristics are formed,respective transistors are required to be formed by different steps,respectively. For this reason, when two transistors having mutuallydifferent characteristics are disposed in the same wiring layer, forforming one transistor, for example, a hard mask is required to beformed to protect the other transistor. Namely, it is necessary to addsteps for individually forming two transistors. In this case,manufacturing of the semiconductor device becomes complicated. Further,in this case, it is necessary to design transistors in consideration ofmisalignment and the like caused in the steps for individually formingtwo transistors. This restricts the in-plane density of the transistorsin the same wiring layer.

In accordance with the present embodiment, the semiconductor device 322includes the transistor 14 and the transistor 15 having mutuallydifferent characteristics. Further, the transistor 15 is formed in thefunctional layer 500 different from the functional layer 400 in whichthe transistor 14 is disposed. Namely, the transistor 14 and thetransistor 15 are disposed in mutually different wiring layers. In thiscase, the steps for individually forming the transistor 14 and thetransistor 15 become unnecessary. Accordingly, it becomes possible toreadily manufacture a semiconductor device including two transistorshaving mutually different characteristics. Further, it becomes possibleto improve the in-plane density of transistors in the semiconductordevice including two transistors having mutually differentcharacteristics.

When two transistors having mutually different characteristics aredisposed in the same wiring layer, for forming one transistor, forexample, a hard mask is formed, thereby to protect the other transistor.In this case, the hard mask is required to be removed by dry etching orthe like. This damages the wiring layer. In accordance with the presentembodiment, as described above, the steps for individually forming thetransistor 14 and the transistor 15 become unnecessary. Accordingly, itis possible to suppress the wiring layer from being damaged.

FIG. 55 is a circuit diagram showing a semiconductor device 324 inaccordance with a thirteenth embodiment. The semiconductor device 324 inaccordance with the present embodiment includes a functional layer 600formed of the wiring layer 100 and the wiring layer 200. In the wiringlayer 200 forming the functional layer 600 of the multilayer wiringlayer disposed over the substrate 60, there is disposed a transistor 16(10) functioning as an access transistor. Except for this point, thesemiconductor device 324 in accordance with the present embodiment hasthe same configuration as that of the semiconductor device 322 inaccordance with the twelfth embodiment. Incidentally, the functionallayer 600 in the present embodiment is formed of the wiring layer 100and the wiring layer 200 disclosed in any of the first to tenthembodiments. In the present specification, the transistor 10 disposed infunctional layer 600 is referred to as the transistor 16.

As shown in FIG. 55, the semiconductor device 324 in accordance with thepresent embodiment includes a 6-transistor type SRAM cell formed of twoinverters and two access transistors. The inverter is a CMOS inverterformed of the transistor 14 and the transistor 15 included in thesemiconductor device 322 in accordance with the twelfth embodiment. Theinverter has, for example, the structure shown in FIG. 51. Whereas, theaccess transistor is formed of the transistor 16.

As shown in FIG. 55, the semiconductor device 324 in accordance with thepresent embodiment is formed of the functional layer 600, the functionallayer 400, and the functional layer 500 stacked in this order. Thefunctional layer 400 forms a PMOS layer. In this case, the transistor 14disposed in the functional layer 400 is a P type transistor. Thefunctional layer 400 has two transistors 14 for every one SRAM cell. Thefunctional layer 500 forms an NMOS layer. In this case, the transistor15 disposed in the functional layer 500 is an N type transistor. Thefunctional layer 500 has two transistors 15 for every one SRAM cell.

As shown in FIG. 55, the functional layer 600 forms an access transistorlayer. Further, the functional layer 600 has two transistors 16functioning as access transistors for every one SRAM cell. The gateelectrodes of the two access transistors 16 are coupled to a common wordline (WL). Whereas, in the two access transistors 16, ones of thesource/drain electrodes are respectively coupled to different bit lines(BL), and the others are coupled to the inverter circuit.

Also in the present embodiment, it is possible to obtain the sameeffects as those of the twelfth embodiment.

The transistor 16 forming the access transistor and the transistor 14forming the inverter are different in function from each other. For thisreason, the transistor 16, and the transistor 14 and the transistor 15are required to be formed by different steps. Accordingly, when thetransistors 16 and the transistors 14 or the transistors 15 are formedin the same wiring layer, it is necessary to add steps for individuallyforming them. In contrast, in accordance with the present embodiment,the transistor 16 forming the access transistor is formed in a differentwiring layer from the wiring layer in which the transistor 14 and thetransistor 15 forming the inverter are disposed. This eliminates thenecessity of the steps for individually forming the transistor 16, thetransistor 14 and the transistor 15 different in function from eachother. Therefore, manufacturing of the semiconductor device becomeseasy.

FIG. 56 is a circuit diagram showing a semiconductor device 326 inaccordance with a fourteenth embodiment. The semiconductor device 326 inaccordance with the present embodiment includes a functional layer 700.The functional layer 700 forms a capacitance layer, and has acapacitance element 710. The capacitance element 710 is coupled to oneof the source/drain electrodes of the transistor 16 disposed in thefunctional layer 600, and forms a DRAM cell. Incidentally, thefunctional layer 600 can have the same configuration as that of thethirteenth embodiment.

The functional layer 600 includes a plurality of transistors 16 arrangedin an array. Whereas, the functional layer 700 has a plurality ofcapacitance elements 710. The plurality of capacitance elements 710 arerespectively coupled to different transistors 16, and form a DRAM cellarray. In the present embodiment, for example, some of the plurality oftransistors 16 disposed in the functional layer 600 form a DRAM cell,and others form the SRAM cell in accordance with the thirteenthembodiment.

As shown in FIG. 56, the capacitance element 710 is coupled to a plateline (PL). Whereas, the gate electrode of the transistor 16 functioningas an access transistor is coupled to a word line. Further, one of thesource/drain electrodes of the transistor 16 is coupled to a bit line(BL), and the other is coupled to the capacitance element 710.

In accordance with the present embodiment, the DRAM cell and the SRAMcell both use the transistors 16 disposed in the same wiring layer asthe access transistors. In this case, it becomes possible to form theaccess transistor of the DRAM cell and the access transistor of the SRAMcell by the same step. This can facilitate manufacturing of thesemiconductor device.

FIG. 57 is a circuit diagram showing a semiconductor device 328 inaccordance with a fifteenth embodiment. The semiconductor device 328 inaccordance with the present embodiment includes a functional layer 800.The functional layer 800 forms a variable resistance element layer, andhas a variable resistance element 810. The variable resistance element810 is coupled to one of the source/drain electrodes of the transistor16 disposed in the functional layer 600, and forms a variable resistanceelement cell. Incidentally, the functional layer 600 can have the sameconfiguration as that of the thirteenth embodiment.

The functional layer 600 includes a plurality of transistors 16 arrangedin an array. Whereas, the functional layer 800 has a plurality ofvariable resistance elements 810. The plurality of variable resistanceelements 810 are respectively coupled to different transistors 16, andform a variable resistance element cell array. In the presentembodiment, for example, some of the plurality of transistors 16disposed in the functional layer 600 form the variable resistanceelement cell, and others form the SRAM cell in accordance with thethirteenth embodiment. Further, for example, still others not formingthe variable resistance element cell and the SRAM cell form the DRAMcell in accordance with the fourteenth embodiment. In this case, thefunctional layer 700 having the capacitance elements 710 and thefunctional layer 800 having the variable resistance elements 810 areformed of, for example, the same wiring layer.

As shown in FIG. 57, the variable resistance element 810 is coupled tothe plate line (PL). Whereas, the gate electrode of the transistor 16functioning as the access transistor is coupled to the word line.Further, one of the source/drain electrodes of the transistor 16 iscoupled to the bit line (BL), and the other is coupled to the variableresistance element 810.

In accordance with the present embodiment, the variable resistanceelement cell, the SRAM cell, and the DRAM cell all use the transistors16 disposed in the same wiring layer as access transistors. In thiscase, the access transistor of the variable resistance element cell, theaccess transistor of the SRAM cell, and the access transistor of theDRAM cell can be formed by the same step. This can facilitatemanufacturing of the semiconductor device.

FIG. 58 is a cross-sectional view showing a semiconductor device 330 inaccordance with a sixteenth embodiment. FIG. 59 is a plan view showingthe semiconductor device 330 shown in FIG. 58. The semiconductor device330 in accordance with the present embodiment includes a functionallayer 900. The functional layer 900 forms an NAND type Flash memorylayer. The functional layer 900 has a structure in which a large numberof the wiring layers 200 in any of the first to eleventh embodiments arestacked. In the present embodiment, the wiring layer 200 forming thefunctional layer 900 includes a memory element 18 having a floating gatefilm 21 as described later.

As shown in FIG. 58, the functional layer 900 has a structure in which alarge number of the wiring layers 200 are stacked. In the presentembodiment, the functional layer 900 is formed of, for example, alamination of four wiring layers 200. The semiconductor layer 24disposed in each wiring layer 200 except for the wiring layer 200arranged at the lowermost layer of the functional layer 900 is coupledto the wire 202 arranged at the underlying layer. Further, thesemiconductor layer 24 disposed at the wiring layer 20 arranged at thelowermost layer of the functional layer 900 is coupled to the bit line(BL). The wire 202 disposed in the wiring layer 200 arranged at theuppermost layer of the functional layer 900 is coupled to the plate line(PL). Whereas, the gate electrode 20 disposed in each wiring layer 200forms a word line (WL).

In the present embodiment, the wiring layer 200 forming the functionallayer 900 has a memory element 18. The memory element 18 has aninsulation film 23 and a floating gate film 21. The insulation film 23is disposed over the side surface of the gate electrode 20. The floatinggate film 21 is disposed over the side surface of the gate electrode 20via the insulation film 23. The gate insulation film 22 is disposed overthe side surface of the gate electrode 20 via the insulation film 23 andthe floating gate film 21. The floating gate film 21 is electricallyseparated from the wire 202 arranged at the underlying layer by theinsulation film 30. Whereas, the floating gate film 21 is electricallyseparated from the via 212 by the insulation film 40. Incidentally, thegate electrode 20 functions as a control gate film of a Flash memory.Further, in the present embodiment, the wires respectively disposed intwo adjacent wiring layers 200 form the source/drain electrodes. Thesource/drain electrodes, and the gate electrode 20, the insulation film23, the floating gate film 21, the gate insulation film 22, and thesemiconductor layer 24 arranged between two wires 202 forming thesource/drain electrodes in the direction of stacking of the wiringlayers 200, form a memory element 18. Except for these points, thememory element 18 has the same configuration as that of the transistor10 in the first embodiment.

As shown in FIG. 58, the two memory elements 18 adjacent in thedirection of stacking of the wiring layers 200 are coupled to each othervia the source/drain electrodes. This results in that the plurality ofmemory elements 18 arranged in the direction of stacking of the wiringlayers 200, and coupled in series to each other via the source/drainelectrodes form a Flash memory NAND chain.

As shown in FIG. 59, in each wiring layer 200, the gate electrode 20extends in the Y direction in the drawing (the vertical direction inFIG. 59). Whereas, over the gate electrode 20, a plurality of wires 202(not shown) and a plurality of vias 212 separated from one another aredisposed via the insulation film 40. At this step, in the semiconductorlayer 24 disposed over the side surface of the gate electrode 20 via thegate insulation film 22, there are formed a plurality of channel regions50 separated from one another corresponding to the plurality of vias 212separated from one another. This results in the formation of theplurality of memory elements 18 arranged in the Y direction of thedrawing in the same wiring layer 200. Further, the gate electrode 20,the insulation film 23, the floating gate 21, the gate insulation film22, the semiconductor layer 24, and the plurality of wires 202 disposedover the gate electrode 20 are arranged in a plural number in such amanner as to be separated from one another in the X direction of thedrawing (the lateral direction in FIG. 59). Accordingly, each wiringlayer 200 has a plurality of memory elements 18 arranged in an array inthe same wiring layer. The plurality of memory elements 18 arranged inan array in the same wiring layer form respectively different NAND typeFlash memories. Accordingly, the plurality of memory elements 18disposed in the functional layer 900 form a Flash memory array.

Incidentally, in the present embodiment, a trap film formed of SiN orthe like, a charge holding film formed of microcrystals such asnanocrystals, or another film having a charge holding function may bedisposed in place of the floating gate 21.

In accordance with the present embodiment, an NAND type Flash memory canbe formed in the multilayer wiring layer. Further, in accordance withthe present embodiment, a NAND type Flash memory is formed of aplurality of memory elements 18 stacked in the direction of stacking ofthe multilayer wiring layer. This enables shrinkage of the Flash memorymounting area. Therefore, it is possible to increase the density ofsemiconductor elements disposed in the semiconductor device.

FIG. 60 is a cross-sectional view showing a semiconductor device 332 inaccordance with a seventeenth embodiment. FIG. 61 is a circuit diagramshowing the semiconductor device 332 shown in FIG. 60. The semiconductordevice 332 in accordance with the present embodiment includes afunctional layer 950. The functional layer 950 forms a NOR type Flashmemory. The functional layer 950 has the wiring layer 100 and the wiringlayer 200 in any of the first to eleventh embodiments. In the presentembodiment, the wiring layer 200 forming the functional layer 950includes a memory element 19 having a floating gate film 21 as describedlater.

As shown in FIG. 60, the functional layer 950 is formed of the wiringlayer 100, and the wiring layer 200 disposed over the wiring layer 100.In the present embodiment, the wiring layer 200 forming the functionallayer 950 has a memory element 19. The memory element 19 has aninsulation film 23 and a floating gate film 21. The insulation film 23is disposed over the side surface of the gate electrode 20. The floatinggate film 21 is disposed over the side surface of the gate electrode 20via the insulation film 23. The gate insulation film 22 is formed overthe side surface of the gate electrode 20 via the insulation film 23 andthe floating gate film 21. The floating gate film 21 is electricallyseparated from the wire 102 by the insulation film 30. Further, thefloating gate film 21 is electrically separated from the via 212 by theinsulation film 40. Incidentally, the gate electrode 20 functions as acontrol gate film of the Flash memory. Except for these points, thememory element 19 has the same configuration as that of the transistor10 in the first embodiment.

In the present embodiment, the wiring layer 100 forming the functionallayer 950 has a bit line (BL) disposed over the diffusion preventivefilm 122. The wire 102 forming the memory element 19 is disposed overthe bit line (BL), and is coupled to the bit line (BL). Over the wiringlayer 200, there is formed a plate line (PL). The wire 202 forming thememory element 19 is coupled to the plate line (PL). Each gate electrode20 forming the memory element 19 forms a word line (WL).

As shown in FIG. 61, the functional layer 950 includes a plurality ofmemory elements 19 arranged in an array in the X direction and the Ydirection in FIG. 61. The plurality of memory elements 19 arranged inthe X direction in FIG. 61 are coupled to a common bit line (BL) so asto be in parallel with one another. The plurality of memory elements 19thus coupled to the common bit line (BL) form a NOR type Flash memory.

In accordance with the present embodiment, it is possible to form a NORtype Flash memory in the multilayer wiring layer.

FIG. 62 is a cross-sectional schematic view showing a semiconductordevice 334 in accordance with an eighteenth embodiment. Thesemiconductor device 334 in accordance with the present embodimentincludes a multilayer wiring layer formed over a substrate. Further, themultilayer wiring layer includes devices having mutually differentfunctions disposed in mutually different wiring layers. As a result, athree-dimensional LSI structure is implemented. Below, thethree-dimensional LSI structure will be described in details.

As shown in FIG. 62, the multilayer wiring layer includes transistorsrespectively disposed in a plurality of mutually different wiringlayers. The transistors disposed in respective wiring layers havecharacteristics determined based on the functions implemented byrespective wiring layers, respectively. The characteristics oftransistors are, for example, the conductivity type and the thresholdvoltage. In the present embodiment, in one layer of the multilayerwiring layer, there are disposed a plurality of transistors having themutually same characteristic. Whereas, in another layer of themultilayer wiring layer different from the one layer, there are disposeda plurality of transistors having a different characteristic from thatof the transistors disposed in the one layer, and having the mutuallysame characteristic. Thus, the transistors are not individually formedin one layer, and the transistors are individually formed betweendifferent layers. As a result, it is possible to inhibit the layout inthe wiring layer from becoming complicated due to individual formation.Further, it is also possible to inhibit the occurrence of deteriorationof the characteristics of the transistor elements with individualformation. Some of the plurality of wiring layers forming the multilayerwiring layer have, for example, a function as a logic circuit. Whereas,others of the plurality of wiring layers forming the multilayer wiringlayer have, for example, a function as a storage circuit. Thesemiconductor device 334 in accordance with the present embodiment has,for example, a multilayer wiring structure including a first storagecircuit, a logic circuit, a second storage circuit, and a power sourcesystem and an I/O circuit sequentially stacked over a substrate.

In the present embodiment, the substrate can be formed of, for example,an insulating substrate or a semiconductor substrate. The insulatingsubstrate is, for example, a glass substrate or a resin substrate.

As shown in FIG. 62, the logic circuit and the storage circuit are eachformed of a plurality of transistor layers stacked one on another. Theplurality of transistor layers forming the logic circuit and the storagecircuit respectively include transistors different in threshold voltageor conductivity type from one another. Each transistor layer forming thesemiconductor device 334 in the present embodiment is formed of thewiring layer 100 and the wiring layer 200 in accordance with any of thefirst to tenth embodiment.

In the semiconductor device 334 in accordance with the presentembodiment, the logic circuit is formed of, for example, a MVt-PMOStransistor layer, a MVt-NMOS transistor layer, a LVt-PMOS transistorlayer, and a LVt-NMOS transistor layer sequentially stacked. Thethreshold voltages of the transistor layers in the present embodimentincrease in the order of LVt, MVt, and HVt. The values of respectivethreshold voltages are, for example: about 0.3 V for LVt; about 0.4 Vfor MVt; and about 0.5 V for HVt.

In the semiconductor device 334 in accordance with the presentembodiment, the first storage circuit includes, for example, alamination structure in which an access transistor layer, a HVt-PMOStransistor layer, and a HVt-NMOS transistor layer are sequentiallystacked. The access transistor layer is formed of, for example, aHVt-NMOS transistor layer. The first storage circuit includes a SRAMcell. The SRAM cell is formed, as with the thirteenth embodiment, usingaccess transistors disposed in the access transistor layer, and aninverter disposed over the access transistor layer. Whereas, the firststorage circuit includes a capacitance layer disposed under the accesstransistor layer. Using the access transistors disposed in the accesstransistor layer, and the capacitance layer, a DRAM cell is formed aswith the fourteenth embodiment. Further, the first storage circuitincludes a variable resistance element layer disposed under the accesstransistor layer. Using the access transistors disposed in the accesstransistor layer, and the variable resistance element layer, a variableresistance element cell is formed as with the fifteenth embodiment. Asshown in FIG. 62, the first storage circuit includes a passive element.The passive element is, for example, a resistance element. Further, thepassive element is arranged in, for example, the underlying layer of theaccess transistor layer.

The second storage circuit is formed of a Flash memory layer. The Flashmemory layer has the Flash memory in the sixteenth embodiment or theseventeenth embodiment.

Over the second storage circuit, there are formed a power source systemwire and an I/O circuit. The power source system wire supplies anexternally supplied power source potential and a GND potential to eachcircuit.

Incidentally, respective wiring layers forming the semiconductor device334 in accordance with the present embodiment may be stacked in theorder shown in FIG. 62, or may be stacked in a different order from thatof FIG. 62.

Then, the effects of the present embodiment will be described. When aplurality of transistors having mutually different characteristics areformed, respective transistors are required to be formed by differentsteps, respectively. For this reason, when a plurality of transistorshaving mutually different characteristics are disposed in the samewiring layer, for forming some transistors, for example, a hard mask isrequired to be formed to protect the other transistors. Namely, it isnecessary to add steps for individually forming a plurality oftransistors. In this case, manufacturing of the semiconductor devicebecomes complicated.

In accordance with the present embodiment, a plurality of transistorshaving different characteristics are disposed in different wiringlayers, respectively. This implements a three-dimensional LSI structureincluding a plurality of devices disposed in mutually different wiringlayers, and having mutually different functions. In this case, it is notnecessary to add individual formation steps for forming a plurality oftransistors having different characteristics. This can facilitatemanufacturing of a semiconductor device including a plurality of deviceshaving mutually different functions.

Further, in accordance with the present embodiment, transistors areformed in respective wiring layers with each semiconductor layer as achannel. For this reason, it becomes possible to arbitrarily select thekind of the substrate such as an insulating substrate or a semiconductorsubstrate. This enables the reduction of the cost of the semiconductordevice.

Up to this point, the embodiments of the present invention weredescribed by reference to the accompanying drawings. However, these areexamples of the present invention. Various configurations other thanthose described above can also be adopted.

What is claimed is:
 1. A semiconductor device, comprising: a first wiredisposed in a first wiring layer, a second wire disposed in a secondwiring layer stacked over the first wiring layer, a gate electrodearranged between the first wire and the second wire in a direction ofstacking of the first wiring layer and the second wiring layer, and notcoupled with the first wire and the second wire, a gate insulation filmdisposed over a side surface of the gate electrode, a semiconductorlayer disposed over the side surface of the gate electrode via the gateinsulation film, and coupled with the first wire and the second wire, avia disposed under the second wire, and coupled with the second wire, asecond insulation film disposed between the gate electrode and the firstwire, and a third insulation film disposed between the gate electrodeand the via, wherein a film thickness of the second insulation film islarger than a film thickness of the third insulation film.
 2. Thesemiconductor device according to claim 1, wherein the gate electrode isdisposed over the first wiring layer via a first insulation film, andwherein the first insulation film is formed of a lower layer insulationfilm, and an upper layer insulation film disposed over the lower layerinsulation film, and formed of a different material from that for thelower layer insulation film.
 3. The semiconductor device according toclaim 2, wherein the lower layer insulation film is formed of a siliconnitride film, and wherein the upper layer insulation film is formed of asilicon oxide film.
 4. The semiconductor device according to claim 1,wherein the first wire is coupled with the semiconductor layer via afirst conductive film disposed over the first wire, and formed of adifferent material from that for the first wire.
 5. The semiconductordevice according to claim 4, wherein the first conductive film comprisesTi, Ta, W, Al, TiN, TaN, or WN; a compound containing Co or W; or amaterial obtained by introducing at least one of C and O to any of theseelements and compounds.
 6. The semiconductor device according to claim4, comprising: a third wire disposed over the first wiring layer,wherein the gate electrode is coupled with the third wire via a secondconductive film comprised of a different material from that for thethird wire.
 7. The semiconductor device according to claim 1, wherein atop surface of the first wire and a bottom surface of the via overlapeach other in plan view, and wherein a part of the semiconductor layeris arranged in a region of overlap between the top surface of the firstwire and the bottom surface of the via.
 8. The semiconductor deviceaccording to claim 7, wherein a planar shape of the gate electrode is apolygon, and wherein the region of overlap between the top surface ofthe first wire and the bottom surface of the via includes one side ofthe gate electrode.
 9. The semiconductor device according to claim 8,wherein the region of overlap between the top surface of the first wireand the bottom surface of the via includes at least a part of one sideof the gate electrode, and does not include two sides adjacent to theone side of the gate electrode.
 10. The semiconductor device accordingto claim 7, wherein the planar shape of the gate electrode is a polygon,and wherein the region of overlap between the top surface of the firstwire and the bottom surface of the via does not include one side of thegate electrode, and includes a part of each of two sides adjacent to theone side of the gate electrode.
 11. The semiconductor device accordingto claim 7, wherein one of the top surface of the first wire and thebottom surface of the via is arranged inside the other of the topsurface of the first wire and the bottom surface of the via in planview, in a direction of extension of the two sides.
 12. Thesemiconductor device according to claim 1, wherein the semiconductorlayer is formed of an oxide semiconductor.
 13. The semiconductor deviceaccording to claim 12, wherein the oxide semiconductor is comprised ofInGaZnO, InZnO, ZnO, ZnAlO, ZnCuO, NiO, SnO, SnO₂, CuO, Cu₂O, Ta₂O₅, orTiO₂.
 14. The semiconductor device according to claim 1, wherein thegate electrode is comprised of Ti, Ta, W, Al, TiN, TaN, or WN, acompound containing Co or W, or a material obtained by introducing atleast one of C and O to any of these.
 15. The semiconductor deviceaccording to claim 1, wherein the gate insulation film is comprised of asilicon oxide film or a silicon nitride film, an oxide film of at leastone of Hf, Zr, Al, Ti, and Ta, a metal silicate product of any of these,or a film obtained by adding at least one of nitrogen and carbon to anyof these.
 16. The semiconductor device according to claim 1, wherein athickness of the semiconductor layer in the direction of stacking of thefirst wiring layer and the second wiring layer is 30 to 300 nm.
 17. Thesemiconductor device according to claim 1, comprising: a fourth wiredisposed in the first wiring layer, and not coupled with the gateelectrode, a fifth wire disposed in the second wiring layer, and notcoupled with the gate electrode, and a second semiconductor layerdisposed over the side surface of the gate electrode via the gateinsulation film, and coupled with the fourth wire and the fifth wire.18. The semiconductor device according to claim 17, wherein thesemiconductor layer has a first conductivity type, and wherein thesecond semiconductor layer has a second conductivity type different fromthe first conductivity type.